Linearly chirped microwave waveforms (LCMWs) are indispensable in advanced radar systems. Our study introduces and validates, through extensive experimentation, the innovative application of a thin-film lithium niobate (TFLN) photonic integrated circuit (PIC) to realize a Fourier domain mode-locked optoelectronic oscillator (FDML OEO) for generating high-precision LCMW signals. This integrated chip combines a phase modulator (PM) and an electrically tuned notch micro-ring resonator (MRR), which functions as a rapidly tunable bandpass filter, facilitating the essential phase-to-intensity modulation (PM-IM) conversion for OEO oscillation. By synchronizing the modulation period of the applied driving voltage to the MRR with the OEO loop delay, we achieve Fourier domain mode-locking, producing LCMW signals with an impressive tunable center frequency range of 18.55 GHz to 23.59 GHz, an adjustable sweep bandwidth from 3.85 GHz to 8.5 GHz, and a remarkable chirp rate up to 3.22 GHz/μs. Unlike conventional PM-IM based FDML OEOs, our device obviates the need for expensive tunable lasers or microwave sources, positioning it as a practical solution for generating high-frequency LCMW signals with extended sweep bandwidth and high chirp rates, all within a compact and cost-efficient form factor.

Photonic integrated switches that are both space and wavelength selective are a highly promising technology for data-intensive applications as they benefit from multi-dimensional manipulation of optical signals. However, scaling these switches normally poses stringent challenges such as increased fabrication complexity and control difficulties, due to the growing number of switching elements. In this work, we propose a new type of dilated crosspoint topology, which efficiently handles both space and wavelength selective switching, while reducing the required switching element count by an order of magnitude compared to reported designs. To the best of our knowledge, our design requires the fewest switching elements for an equivalent routing paths number and it fully cancels the first-order in-band crosstalk. We demonstrate such an ultra-compact space-and-wavelength selective switch (SWSS) at a scale of 4×4×4λ on the silicon-on-insulator (SOI) platform. Experimental results reveal that the switch achieves an insertion loss ranging from 2.3 dB to 8.6 dB and crosstalk levels in between -35.3dB and -59.7dB. The add-drop microring-resonators (MRRs) are equipped with micro-heaters, exhibiting a rise and fall time of 46 μs and 0.33 μs, respectively. These performance characteristics highlight the switch’s ultra-low element count and crosstalk with low insertion loss, making it a promising candidate for advanced data center applications.