Chinese Optics Letters, 2011, 9 (5): 052501, Published Online: Apr. 22, 2011
Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD Download: 505次
有机光电探测器 紫外 带通 PVK 250.0040 Detectors 250.2080 Polymer active devices 310.1860 Deposition and fabrication 310.6845 Thin film devices and applications
Abstract
We fabricate an ultraviolet photodetector based on a blend of poly (N-vinylcarbazole) (PVK) and 2-tert-butylphenyl-5-biphenyl-1,3, 4-oxadiazole (PBD) using spin coating. The device exhibites a low dark current density of 2.2 \times 10?3 \muA/cm2 at zero bias. The spectral response of the device shows a narrow bandpass characteristic from 300 to 355 nm, and the peak response is 18.6 mA/W located at 334 nm with a bias of –1 V. We also study the performances of photodetectors with different blend layer thicknesses. The largest photocurrent density is obtained with a blend of 90 nm at the same voltage.
Jian Sun, Kuanjun Peng, Lu Zhu, Zuofu Hu, Qian Dai, Xiqing Zhang, Yongsheng Wang. Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD[J]. Chinese Optics Letters, 2011, 9(5): 052501.