CLP
Researching
中国光学期刊网
光电汇
爱光学
游客,您好!
登录
|
免费注册
查询
首页
期刊
全部期刊
CLP期刊
光学期刊联盟
特色专题
各刊动态
过刊浏览
订阅
文献
最新论文
推荐论文
论文引用排行
近年引用排行
论文下载排行
论文浏览排行
网络首发
视频论文
会议摘要集
光电论文月报
论文查询
学术活动
光学前沿系列会议
中国光学学会研究生论坛
行业培训
行业评选(十大进展)
光学前沿在线
所有活动
汇同会议系统
资讯
最新资讯
特别策划
实验室
专家库
观点
招聘
全部资讯
视频
全部视频
视频论文
五分钟光学
直播资源库
动态封面
知识服务
研究关联图谱
学科热门作者
科技词云
学科主题词表
学科研究趋势
论文图表搜索
光学研究机构
光学智库
RSS feed
评选/奖项
搜 索
相同关键词
【Thin film devices and applications】
论文列表
期刊
全部期刊
Advanced Imaging
Advanced Photonics
Advanced Photonics Nexus
Chinese Journal of Lasers B
Chinese Optics Letters
Frontiers of Optoelectronics
High Power Laser Science and Engineering
International Journal of Extreme Manufacturing
Journal of Advanced Dielectrics
Journal of Innovative Optical Health Sciences
Journal of Semiconductors
Journal of the European Optical Society-Rapid Publications
Laser and Particle Beams
Light: Science & Applications
Matter and Radiation at Extremes
Nano-Micro Letters
Nuclear Science and Techniques
Opto-Electronic Advances
Opto-Electronic Science
Opto-Electronic Technology
Optoelectronics Letters
Photonic Sensors
Photonics Insights
Photonics Research
PhotoniX
Ultrafast Science
半导体光电
半导体光子学与技术
爆破
玻璃搪瓷与眼镜
大气科学学报
大气与环境光学学报
电光与控制
发光学报
辐射研究与辐射工艺学报
高功率激光及等离子体物理研究论文集(专题)
光的世界
光电工程
光电技术应用
光电子.激光
光电子技术
光谱学与光谱分析
光散射学报
光通信技术
光通信研究
光纤与电缆及其应用技术
光学 精密工程
光学技术
光学学报
光学学报(网络版)
光学仪器
光学与光电技术
光子学报
硅酸盐通报
硅酸盐学报
航天返回与遥感
核技术
红外
红外技术
红外与毫米波学报
红外与激光工程
激光技术
激光生物学报
激光与光电子学进展
激光与红外
激光杂志
量子电子学报
量子光学学报
强激光技术进展
强激光与粒子束
人工晶体学报
实验科学与技术
太赫兹科学与电子信息学报
微电子学
无机材料学报
现代科学仪器
现代显示
压电与声光
遥感技术与应用
液晶与显示
应用光学
应用激光
原子与分子物理学报
中国光学
中国激光
中国激光医学杂志
选择下列全部论文
将选定结果:
参考文献
文本文件
XML文件
EndNote文件
Thin films
Te-free SbBi thin film as a laser heat-mode photoresist
Download:853次
Kui Zhang
1,2
Zhengwei Wang
1,2
Guodong Chen
1,2
Yang Wang
1,*
[ ... ]
Heorgi Tsikhanchuk
3
Author Affiliations
Abstract
1
Laboratory of Micro-Nano Optoelectronic Materials and Devices, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
KBTEM-OMO Joint Stock Company, Minsk 220033, Republic of Belarus
A Te-free binary phase change material SbBi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability (surface roughness <1 nm), low threshold power for crystallization (2 mW), and high etching selectivity (15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on SbBi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that SbBi is a promising laser heat-mode resist material for micro/nanostructure fabrication.
310.6845
Thin film devices and applications
140.3380
Laser materials
PDF全文
Full Text
Chinese Optics Letters
2019, 17(9): 093102
Materials
Comparative study of coherent terahertz emission from Fe/Pt ferromagnetic heterostructures
Download:883次
Xiao-Peng He
1
Pan-Hui Huang
1
Xiao-Yu Yang
1
Zuan-Ming Jin
2
[ ... ]
Qing-Yuan Jin
1,3
Author Affiliations
Abstract
1
State Key Laboratory of Precision Spectroscopy, School of Physics and Material Science, East China Normal University, Shanghai 200062, China
2
Department of Physics, Shanghai University, Shanghai 200444, China
3
Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
The ultrafast spin dynamic of in-plane magnetized Fe/Pt films was investigated by terahertz emission spectroscopy. The amplitude of the emitted terahertz wave is proportional to the intensity of the exciting laser beams. Both the amplitude and polarity of the terahertz wave can be adjusted by modifying the external magnetic field. The dependency of the amplitude on external magnetic fields is coincident to the hysteresis loops of the sample. Also, the polarity of the terahertz wave is reversed, as the magnetization orientation is reversed. The super-diffusive transient spin current with an inverse spin Hall effect is attributed to the main mechanism of the terahertz emission.
160.3820
Magneto-optical materials
310.6845
Thin film devices and applications
320.2250
Femtosecond phenomena
PDF全文
Full Text
Chinese Optics Letters
2019, 17(8): 081601
Nonlinear Optics
Broadband quasi-phase matching in a MgO:PPLN thin film
Download:537次
Licheng Ge
1
Yuping Chen
1,*
Haowei Jiang
1
Guangzhen Li
1
[ ... ]
Xianfeng Chen
1,2
Author Affiliations
Abstract
1
State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
2
e-mail: xfchen@sjtu.edu.cn
Future quantum information networks operated on telecom channels require qubit transfer between different wavelengths while preserving quantum coherence and entanglement. Qubit transfer is a nonlinear optical process, but currently the types of atoms used for quantum information processing and storage are limited by the narrow bandwidth of upconversion available. Here we present the first experimental demonstration of broadband and high-efficiency quasi-phase matching second-harmonic generation (SHG) in a chip-scale periodically poled lithium niobate thin film. We achieve a large bandwidth of up to 2 THz for SHG by satisfying quasi-phase matching and group-velocity matching simultaneously. Furthermore, by changing the film thickness, the central wavelength of the quasi-phase matching SHG bandwidth can be modulated from 2.70 μm to 1.44 μm. The reconfigurable quasi-phase matching lithium niobate thin film provides a significant on-chip integrated platform for photonics and quantum optics.
Lithium niobate
Thin film devices and applications
Harmonic generation and mixing
Nonlinear optics, integrated optics
PDF全文
Full Text
Photonics Research
2018, 6(10): 10000954
Errata
High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note
Download:633次
Yiding Lin
1,2,4
Kwang Hong Lee
2
Shuyu Bao
1,2
Xin Guo
1
[ ... ]
Chuan Seng Tan
1,2,*
Author Affiliations
Abstract
1
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
2
Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore
3
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
4
e-mail: liny0075@e.ntu.edu.sg
This publisher’s note reports corrections to Eq. (1) in [
Photon. Res.
5
,
702
(
2017
)
PRHEIZ
2327-9125
10.1364/PRJ.5.000702
].
Photodetectors
Photodiodes
Optoelectronics
Semiconductor materials
Thin film devices and applications
PDF全文
Full Text
Photonics Research
2018, 6(1): 01000046
OTHER AREAS OF OPTICS
Thermal-stable mixed-cation lead halide perovskite solar cells
Download:1053次
Shuai Gu
Pengchen Zhu
Renxing Lin
Mingyao Tang
[ ... ]
Jia Zhu
*
Author Affiliations
Abstract
National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
As perovskite solar cells show tremendous potential for widespread applications, we find that adding inorganic thermal-stable cesium ions into
MAPbI
3
results in significantly improves thermal stability. For un-encapsulated perovskite devices, the energy conversion efficiency maintains about 75% of its original value (over 15%) in the
MA
0.85
Cs
0.05
PbI
3
device under 80 min of heating at 140°C in a dry atmosphere (
RH
≤
30
%
). With significantly improved thermal stability achieved by a convenient process, it is expected that this type of mixed-cation perovskites can further facilitate large scale applications.
350.6050
Solar energy
230.0250
Optoelectronics
310.6845
Thin film devices and applications
PDF全文
Full Text
Chinese Optics Letters
2017, 15(9): 093501
Photodetectors
High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform
Download:820次
Yiding Lin
1,2,3
Kwang Hong Lee
2
Shuyu Bao
1,2
Xin Guo
1
[ ... ]
Chuan Seng Tan
1,2,*
Author Affiliations
Abstract
1
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
2
Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore
3
e-mail: liny0075@e.ntu.edu.sg
4
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of ~47 mA/cm2 at ?1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of ~97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 μm exhibit a 3 dB bandwidth of ~1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to ~32 GHz with mesa diameter of 10 μm. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics.
(230.5160) Photodetectors
(230.5170) Photodiodes
(230.0250) Optoelectronics
(160.6000) Semiconductor materials
(310.6845)
Thin film devices and applications
.
PDF全文
Full Text
Photonics Research
2017, 5(6): 06000702
Optical Devices
Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss
Download:959次
Jingbo Liu
Pingjian Li
*
Yuanfu Chen
**
Xinbo Song
[ ... ]
Wanli Zhang
Author Affiliations
Abstract
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of
~
20.9
%
with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.
230.4110
Modulators
300.6495
Spectroscopy, teraherz
160.4236
Nanomaterials
310.6845
Thin film devices and applications
PDF全文
Full Text
Chinese Optics Letters
2016, 14(5): 052301
Diffraction and Gratings
Low-cost method of fabricating large-aperture, high efficiency, Fresnel diffractive membrane optic using a modified moiré technique
Download:1106次
Jian Zhang
1
Mengjuan Li
2
Ganghua Yin
2
Jianchao Jiao
2
[ ... ]
Shaojun Fu
1
Author Affiliations
Abstract
1
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
2
Beijing Institute of Space Mechanics & Electricity, Beijing 100076, China
To reduce the cost and achieve high diffraction efficiency, a modified moiré technique for fabricating a large-aperture multi-level Fresnel membrane optic by a novel design of alignment marks is proposed. The modified moiré fringes vary more sensitively with the actual misalignment. Hence, the alignment accuracy is significantly improved. Using the proposed method, a 20 μm thick, four-level Fresnel diffractive polyimide membrane optic with a 200 mm diameter is made, which exhibits over 62% diffraction efficiency into the
+
1
order, and an efficiency root mean square of 0.051.
220.1140
Alignment
050.1380
Binary optics
310.6845
Thin film devices and applications
PDF全文
Full Text
Chinese Optics Letters
2016, 14(10): 100501
Thin Films
Effect of the thickness of light absorption layer on the light-induced transverse thermoelectric effect in Bi
2
Sr
2
Co
2
O
y
films
Guoying Yan
1,2
Liqing Sun
2
Shufang Wang
2,*
Guangsheng Fu
1,2,**
Author Affiliations
Abstract
1
School of Information Engineering, Hebei University of Technology, Tianjin 300401, China
2
Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
Light-induced transverse thermoelectric effect is investigated in incline-oriented
Bi
2
Sr
2
Co
2
O
y
thin films covered with a graphite light absorption layer. Upon the illumination of a 980 nm cw laser, an enhanced voltage signal is detected and the improvement degree is found to be dependent on the thickness of the graphite layer. A two-dimensional (2D) heat transport model using the finite-difference method provides a reasonable explanation to the experimental data. Present results give some valuable instructions for the design of light absorption layers in this type of detector.
310.6845
Thin film devices and applications
040.5160
Photodetectors
230.4170
Multilayers
PDF全文
Full Text
Chinese Optics Letters
2015, 13(6): 063101
Thin Films
Growth of large-area atomically thin MoS
2
film via ambient pressure chemical vapor deposition
Download:1642次
Caiyun Chen
1
Hong Qiao
1
Yunzhou Xue
1
Wenzhi Yu
1
[ ... ]
Qiaoliang Bao
1,2,*
Author Affiliations
Abstract
1
Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China
2
Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia
Atomically thin MoS
2
films have attracted significant attention due to excellent electrical and optical properties. The development of device applications demands the production of large-area thin film which is still an obstacle. In this work we developed a facile method to directly grow large-area MoS
2
thin film on SiO
2
substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS
2
film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS
2
thin film shows carrier mobility up to 3.4 cm
2
V
?1
s
?1
and on/off ratio of 10
5
. The large-area atomically thin MoS
2
prepared in this work has the potential for wide optoelectronic and photonic device applications.
Materials and process characterization
Materials and process characterization
Spectral properties
Spectral properties
Thin film devices and applications
Thin film devices and applications
Thin films
Thin films
other properties
other properties
PDF全文
Full Text
Photonics Research
2015, 3(4): 04000110
«
上一页
1
2
3
4
下一页
»
推荐专家
MORE
张杰
王贻芳
姜会林
潘建伟
曹健林
范滇元
褚君浩
周炳琨
姜中宏
热点聚焦
MORE
2023中国光学十大进展入选名单
重磅!“2023中国光学十大进展”发布
Nd
3+
掺杂光纤的高功率900纳米激光
基于类人算法的智能锁模固体激光器
2023中国光学十大进展提名奖名单
倒计时3天!4月20日,免费参加Photonics Insights专场讲座
学术活动
MORE
安全提示
即将离开中国光学期刊网
您即将离开中国光学期刊网,请注意您的账号和财产安全。
安全提示
即将离开中国光学期刊网
您即将离开中国光学期刊网,请注意您的账号和财产安全。
关于本站 Cookie 的使用提示
中国光学期刊网
使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的
隐私策略
。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
允许本站使用 cookie
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!
快速查询
高级查询
标题
标题
摘要
关键词
作者
作者单位
DOI
期刊
资讯
查询
快速查询
高级查询
最近搜索:
thin film devices and applications
大家在搜:
人工智能
图像处理
光子
热门搜索:
机器视觉
光通信
光纤传感器