导带弯曲对有限深量子阱中激子态影响的研究
张金凤, 李腾. 导带弯曲对有限深量子阱中激子态影响的研究[J]. 量子电子学报, 2018, 35(6): 747.
ZHANG Jinfeng, LI Teng. Effect of band bending on exciton in a finite-barries quantum well[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 747.
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张金凤, 李腾. 导带弯曲对有限深量子阱中激子态影响的研究[J]. 量子电子学报, 2018, 35(6): 747. ZHANG Jinfeng, LI Teng. Effect of band bending on exciton in a finite-barries quantum well[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 747.