量子电子学报, 2018, 35 (6): 747, 网络出版: 2018-12-26
导带弯曲对有限深量子阱中激子态影响的研究
Effect of band bending on exciton in a finite-barries quantum well
补充材料
张金凤, 李腾. 导带弯曲对有限深量子阱中激子态影响的研究[J]. 量子电子学报, 2018, 35(6): 747. ZHANG Jinfeng, LI Teng. Effect of band bending on exciton in a finite-barries quantum well[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 747.