Photonics Research, 2018, 6 (11): 11001062, Published Online: Nov. 11, 2018   

Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon

Author Affiliations
1 Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
3 Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
Basic Information
DOI: 10.1364/PRJ.6.001062
中图分类号: --
栏目: Silicon Photonics
项目基金: Engineering and Physical Sciences Research Council (EPSRC)10.13039/501100000266(EP/P006973/1)、 Royal Academy of Engineering10.13039/501100000287( RF201617/16/28)、 Chinese Scholarship Council、
收稿日期: Aug. 8, 2018
修改稿日期: Sep. 13, 2018
网络出版日期: Nov. 11, 2018
通讯作者: Siming Chen (siming.chen@ucl.ac.uk)
备注: --

Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, Huiyun Liu. Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon[J]. Photonics Research, 2018, 6(11): 11001062.

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