Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon | Photonics Research -- 中国光学期刊网

Photonics Research, 2018, 6 (11): 11001062, Published Online: Nov. 11, 2018

Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon

Mengya Liao ¹Siming Chen ^1,*Zhixin Liu ¹Yi Wang ²Lalitha Ponnampalam ¹Zichuan Zhou ¹Jiang Wu ¹Mingchu Tang ¹Samuel Shutts ³Zizhuo Liu ¹Peter M. Smowton ³Siyuan Yu ²Alwyn Seeds ¹Huiyun Liu ¹

Author Affiliations

¹ Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK

² State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

³ Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK

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Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, Huiyun Liu. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon[J]. Photonics Research, 2018, 6(11): 11001062.

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