Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon

Mengya Liao; Siming Chen; Zhixin Liu; Yi Wang; Lalitha Ponnampalam; Zichuan Zhou; Jiang Wu; Mingchu Tang; Samuel Shutts; Zizhuo Liu; Peter M. Smowton; Siyuan Yu; Alwyn Seeds; Huiyun Liu

doi:doi:10.1364/PRJ.6.001062

Photonics Research, 2018, 6 (11): 11001062, Published Online: Nov. 11, 2018

Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon

Mengya Liao ¹Siming Chen ^1,*Zhixin Liu ¹Yi Wang ²Lalitha Ponnampalam ¹Zichuan Zhou ¹Jiang Wu ¹Mingchu Tang ¹Samuel Shutts ³Zizhuo Liu ¹Peter M. Smowton ³Siyuan Yu ²Alwyn Seeds ¹Huiyun Liu ¹

Author Affiliations

¹ Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK

² State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

³ Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK

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Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, Huiyun Liu. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon[J]. Photonics Research, 2018, 6(11): 11001062.

References

[1] A. Y. Liu, S. Srinivasan, J. Norman, A. C. Gossard, J. E. Bowers. Quantum dot lasers for silicon photonics [Invited]. Photon. Res., 2015, 3: B1-B9.

[2] A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, J. E. Bowers. High performance continuous wave 1.3??μm quantum dot lasers on silicon. Appl. Phys. Lett., 2014, 104: 041104.

[3] S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, H. Liu. Electrically pumped continuous-wave III-V quantum dot lasers on silicon. Nat. Photonics, 2016, 10: 307-311.

[4] S. Chen, M. Liao, M. Tang, J. Wu, M. Martin, T. Baron, A. Seeds, H. Liu. Electrically pumped continuous-wave 1.3??μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates. Opt. Express, 2017, 25: 4632-4639.

[5] D. Jung, Z. Zhang, J. Norman, R. Herrick, M. J. Kennedy, P. Patel, K. Turnlund, C. Jan, Y. Wan, A. C. Gossard, J. E. Bowers. Highly reliable low-threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency. ACS Photon., 2017, 5: 1094-1100.

[6] Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, K. M. Lau. Optically pumped 13??μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Opt. Lett., 2016, 41: 1664-1667.

[7] Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, J. E. Bowers. 1.3??μm submilliamp threshold quantum dot micro-lasers on Si. Optica, 2017, 4: 940-944.

[8] N. Kryzhanovskaya, E. Moiseev, Y. Polubavkina, M. Maximov, M. Kulagina, S. Troshkov, Y. Zadiranov, Y. Guseva, A. Lipovskii, M. Tang, M. Liao, J. Wu, S. Chen, H. Liu, A. Zhukov. Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3??μm. Opt. Lett., 2017, 42: 3319-3322.

[9] S. Chen, M. Tang, Q. Jiang, J. Wu, V. Dorogan, M. Benamara, Y. Mazur, G. Salamo, P. Smowton, A. Seeds, H. Liu. InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate. ACS Photon., 2014, 1: 638-642.

[10] M. Liao, S. Chen, S. Huo, S. Chen, J. Wu, M. Tang, K. Kennedy, W. Li, S. Kumar, M. Martin, T. Baron, C. Jin, I. Ross, A. Seeds, H. Liu. Monolithically integrated electrically pumped continuous-wave III-V quantum dot light sources on silicon. IEEE J. Sel. Top. Quantum Electron., 2017, 23: 1900910.

[11] Y. Wang, S. Chen, Y. Yu, L. Zhou, L. Liu, C. Yang, M. Liao, M. Tang, Z. Liu, J. Wu, W. Li, I. Ross, A. J. Seeds, H. Liu, S. Yu. Monolithic quantum-dot distributed feedback laser array on silicon. Optica, 2018, 5: 528-533.

[12] J. Wu, S. Chen, A. Seeds, H. Liu. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells. J. Phys. D, 2015, 48: 363001.

[13] E. Tournié, L. Cerutti, J.-B. Rodriguez, H. Liu, J. Wu, S. Chen. Metamorphic III–V semiconductor lasers grown on silicon. MRS Bull., 2016, 41: 218-223.

[14] 14AgrawalG. P., Fiber-Optic Communication Systems, 4th ed. (Wiley, 2010).

[15] 15KrakowskiM.ResneauP.CalligaroM.LiuH.HopkinsonM., “High power, very low noise, C.W. operation of 1.32 μm quantum-dot Fabry–Perot laser diodes,” in IEEE 20th International Semiconductor Laser Conference, Conference Digest (IEEE, 2006), pp. 39–40.

[16] A. Capua, L. Rozenfeld, V. Mikhelashvili, G. Eisenstein, M. Kuntz, M. Laemmlin, D. Bimberg. Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser. Opt. Express, 2007, 15: 5388-5393.

[17] A. Gubenko, I. Krestnikov, D. Livshtis, S. Mikhrin, A. Kovsh, L. West, C. Bornholdt, N. Grote, A. Zhukov. Error-free 10 Gbit/s transmission using individual Fabry-Perot modes of low-noise quantum-dot laser. Electron. Lett., 2007, 43: 1430-1431.

[18] M. A. Tischler, T. Katsuyama, N. A. El-Masry, S. M. Bedair. Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice. Appl. Phys. Lett., 1985, 46: 294-296.

[19] A. Y. Liu, T. Komljenovic, M. L. Davenport, A. C. Gossard, J. E. Bowers. Reflection sensitivity of 1.3??μm quantum dot lasers epitaxially grown on silicon. Opt. Express, 2017, 25: 9535-9543.

[20] Y.-G. Zhou, C. Zhou, C.-F. Cao, J.-B. Du, Q. Gong, C. Wang. Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge. Opt. Express, 2017, 25: 28817-28824.

[21] A. Liu, R. Herrick, O. Ueda, P. Petroff, A. Gossard, J. Bowers. Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon. IEEE J. Sel. Top. Quantum Electron., 2015, 21: 1900708.

[22] B. Jalali, S. Fathpour. Silicon photonics. J. Lightwave Technol., 2006, 24: 4600-4615.

[23] M. Akiyama, Y. Kawarada, K. Kaminishi. Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD. Jpn. J. Appl. Phys., 1984, 23: L843-L845.

[24] M. Tang, S. Chen, J. Wu, Q. Jiang, K. Kennedy, P. Jurczak, M. Liao, R. Beanland, A. Seeds, H. Liu. Optimizations of defect filter layers for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. IEEE J. Sel. Top. Quantum Electron., 2016, 22: 50-56.

[25] J. R. Orchard, S. Shutts, A. Sobiesierski, J. Wu, M. Tang, S. Chen, Q. Jiang, S. Elliott, R. Beanland, H. Liu, P. M. Smowton, D. J. Mowbray. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Opt. Express, 2016, 24: 6196-6202.

[26] 26“IEEE P802.3ba 40 Gb/s and 100 Gb/s Ethernet task force,” IEEE Std 802.3ba (2010).

[27] L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, K. J. Malloy. Optical characteristics of 1.24??μm InAs quantum-dot laser diodes. IEEE Photon. Technol. Lett., 1999, 11: 931-933.