发光学报, 2019, 40 (9): 1130, 网络出版: 2019-09-27   

全息光刻制备808 nm腔面光栅半导体激光器

808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography
作者单位
1 长春理工大学 理学院, 吉林 长春 130022
2 吉林农业大学 信息技术学院, 吉林 长春 130018
引用该论文

王岳, 王勇, 李占国, 尤明慧. 全息光刻制备808 nm腔面光栅半导体激光器[J]. 发光学报, 2019, 40(9): 1130.

WANG Yue, WANG Yong, LI Zhan-guo, YOU Ming-hui. 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography[J]. Chinese Journal of Luminescence, 2019, 40(9): 1130.

参考文献

[1] WENZEL H,KLEHR A,BRAUN M,et al.. Design and realization of high-power DFB lasers [C]. Proceedings of SPIE 5594,Physics and Applications of Optoelectronic Devices,Philadelphia,Pennsylvania,United States, 2004:110-123.

[2] VOLODIN B L,DOLGY S V,MELNIK E D,et al.. Wavelength stabilization and spectrum narrowing of high-power multimode laser diodes and arrays by use of volume Bragg gratings [J]. Opt. Lett., 2004,29(16):1891-1893.

[3] KLEHR A,BUGGE F,ERBERT G,et al.. High power broad area 808 nm DFB lasers for pumping solid state lasers [C]. Proceedings of SPIE 6133,Novel In-plane Semiconductor Lasers V,San Jose,California,United States, 2006:96-105.

[4] KUDO K,YASHIKI K,SASAKI T,et al.. 1.55-μm wavelength-selectable microarray DFB-LDs with monolithically integrated MMI combiner,SOA,and EA-modulator [J]. IEEE Photonics Technol. Lett., 2000,12(3):242-244.

[5] STREIFER W,SCIFRES D,BURNHAM R. Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers [J]. IEEE J. Quantum Electron., 1975,11(11):867-873.

[6] 刘丹丹,王勇,叶镇,等. 全息光刻制备808 nm分布反馈半导体激光器的光栅 [J]. 中国激光, 2015,42(2):0202008-1-5.

    LIU D D,WANG Y,YE Z,et al.. Grating fabrication of 808 nm distributed feedback semiconductor laser by holographic photolithography [J]. Chin. J. Lasers, 2015,42(2):0202008-1-5. (in Chinese)

[7] 叶镇,王勇,高占琦,等. 基于全息光刻系统制备528 nm周期孔阵图形 [J]. 中国激光, 2015,42(8):0809003-1-5.

    YE Z,WANG Y,GAO Z Q,et al.. Preparation of 528 nm periodic hole array based on holographic lithography system [J]. Chin. J. Lasers, 2015,42(8):0809003-1-5. (in Chinese)

[8] KOGELNIK H,SHANK C V. Coupled-wave theory of distributed feedback lasers [J]. J. Appl. Phys.,1972,43(5):2327-2335.

[9] GOUREVITCH A,VENUS G,SMIRNOV V,et al.. Efficient pumping of Rb vapor by high-power volume Bragg diode laser [J]. Opt. Lett., 2007,32(17):2611-2613.

[10] 辛国锋,程灿,瞿荣辉,等. 体布拉格光栅外腔半导体激光器光谱特性研究 [J]. 光学学报, 2007,27(10):1821-1826.

    XIN G F,CHENG C,QU R H,et al.. Study of spectral characteristics of external-cavity semiconductor laser a volume Bragg grating [J]. Acta Opt. Sinica, 2007,27(10):1821-1826. (in Chinese)

[11] 叶淑娟,秦莉,戚晓东,等. 二阶光栅分布反馈半导体激光器的出光特性 [J]. 中国激光, 2010,37(9):2371-2375.

    YE S J,QIN L,QI X D,et al.. Emission characteristics of second-order distributed feedback semiconductor lasers [J]. Chin. J. Lasers, 2010,37(9):2371-2375. (in Chinese)

[12] 仕均秀,秦莉,叶淑娟,等. 具有表面二阶金属光栅的927 nm分布反馈半导体激光器的研制 [J]. 光电子·激光, 2011,22(10):1488-1491.

    SHI J X,QIN L,YE S J,et al.. A 927 nm distributed feedback laser with surface second-order metal grating [J]. J. Optoelectron. Laser, 2011,22(10):1488-1491. (in Chinese)

王岳, 王勇, 李占国, 尤明慧. 全息光刻制备808 nm腔面光栅半导体激光器[J]. 发光学报, 2019, 40(9): 1130. WANG Yue, WANG Yong, LI Zhan-guo, YOU Ming-hui. 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography[J]. Chinese Journal of Luminescence, 2019, 40(9): 1130.

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