半导体光电, 2013, 34 (5): 746, 网络出版: 2013-11-01  

GaN基和GaAs基半导体激光器的电学特性研究

Investigation on Electrical Properties of GaN and GaAs Based Semiconductor Laser Diodes
作者单位
北京大学 宽禁带半导体中心,北京 100871
引用该论文

贺永发, 李丁, 曹文彧, 陈钊, 杨薇, 陈伟华, 胡晓东. GaN基和GaAs基半导体激光器的电学特性研究[J]. 半导体光电, 2013, 34(5): 746.

HE Yongfa, LI Ding, CAO Wenyu, CHEN Zhao, YANG Wei, CHEN Weihua, HU Xiaodong. Investigation on Electrical Properties of GaN and GaAs Based Semiconductor Laser Diodes[J]. Semiconductor Optoelectronics, 2013, 34(5): 746.

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贺永发, 李丁, 曹文彧, 陈钊, 杨薇, 陈伟华, 胡晓东. GaN基和GaAs基半导体激光器的电学特性研究[J]. 半导体光电, 2013, 34(5): 746. HE Yongfa, LI Ding, CAO Wenyu, CHEN Zhao, YANG Wei, CHEN Weihua, HU Xiaodong. Investigation on Electrical Properties of GaN and GaAs Based Semiconductor Laser Diodes[J]. Semiconductor Optoelectronics, 2013, 34(5): 746.

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