传导冷却高功率半导体激光器单巴器件CW工作模式下的热加速寿命试验
[1] HADEN J M,ENDRIZ J G,SAKAMOTO M,et al.. Advances in high average power long life laser diode pump array architectures [C]. Proceedings of Laser Diodes and Applications,San Jose,CA,United States, 1995:2-21.
[2] 孙胜明,范杰,徐莉,等. 锥形半导体激光器研究进展 [J]. 中国光学, 2019,12(1):48-58.
[3] WELCH D F. A brief history of high power semiconductor lasers [J]. IEEE J. Selected Topics Quantum Electron, 2000,6(6):1470-1477.
[4] 高松信,雷军,郭林辉,等. 连续100 W量子阱二极管激光器封装工艺 [J]. 强激光与粒子束, 2010,22(11):2510-2512.
[5] 仇伯仓,胡海,汪卫敏,等. 12 W高功率高可靠性915 nm半导体激光器设计与制作 [J]. 中国光学, 2018,11(4):590-603.
[6] 海一娜,邹永刚,田锟,等. 水平腔面发射半导体激光器研究进展 [J]. 中国光学, 2017,10(2):194-206.
[7] 田锟,邹永刚,马晓辉,等. 面发射分布反馈半导体激光器 [J]. 中国光学, 2016,9(1):51-64.
[8] 王立军,彭航宇,张俊. 大功率半导体激光合束进展 [J]. 中国光学, 2015,8(4):517-534.
[9] GALLANT D J. Diode array reliability experiment [C]. Proceedings of High-Power Diode Laser Technology and Applications Ⅱ,San Jose,Ca,United States, 2004:212-217.
[10] DORSCH F,DAIMINGER F X. Aging tests of high-power diode lasers as a basis for an international lifetime standard [C]. Proceedings of The Third International Workshop on Laser Beam and Optics Characterization,Quebec City,Canada, 1996:381-389.
[11] LU G G,HUANG Y,EN Y F. Lifetime estimation of high power lasers [C]. Proceedings of Semiconductor Lasers and Applications Ⅳ,Beijing, 2010.
[12] LU G G,XIE S F,HAO M M,et al.. High power diode lasers reliability experiment [C]. Proceedings of 2013 International Conference on Optical Instruments and Technology:Optical Systems and Modern Optoelectronic Instruments,Beijing, 2013:90421H-1-6.
[13] 高松信,魏彬,吕文强,等. 高功率二极管激光器寿命测试 [J]. 强激光与粒子束, 2004,16(6):689-692.
[14] BAO L,WANG J,DEVITO M,et al.. Reliability of high performance 9xx-nm single emitter laser diodes [C]. Proceedings of High-power Diode Laser Technology and Applications Ⅷ,San Francisco,California,United States, 2010:758302-1-11.
[15] KANSKAR M,NESNIDAL M,MEASSICK S,et al.. Performance and reliability of arrow single-mode and 100-μm laser diode and the use of NAM in Al-free lasers [C]. Proceedings of Novel In-plane Semiconductor Lasers Ⅱ,San Jose,CA,United States, 2003:196-208.
[16] HUSLER K,ZEIMER U,SUMPF B,et al.. Degradation model analysis of laser diodes [J]. J. Mater. Sci.: Mater. Electron., 2008,19(S1):160-164.
[17] BERK Y,KARNI Y,KLUMEL G,et al.. Space-grade reliability of 808 nm QCW laser diode arrays (LDAs) delivering over 20 billion shots [C]. Proceedings of High-power Diode Laser Technology and Applications Ⅶ,San Jose,California,United States, 2009.
[18] ZOU Y,ZUCKER E P,UPPAL K,et al.. Reliability and performance of InGaAs broad-area lasers emitting between 910 and 980 nm [C]. Proceedings of Testing,Reliability,and Applications of Optoelectronic Devices,San Jose,CA,United States, 2001.
[19] YAMAKOSHI S,ABO M,WADA O,et al.. Reliability of high radiance InGaAsP/InP LEDs operating in the 1.2-1.3 μm wavelength [J]. IEEE J. Quant. Electron., 1981,17(2):167-173.
[20] 四机部标准化研究所. GB 2689.1-1981 恒定应力寿命试验和加速寿命试验方法总则 [S]. 北京:中国标准出版社,1981.
Institute of Standardization of Four Machinery Departments. GB 2689.1-1981 Constant Stress Life Tests and Acceleration Life Tests: General Rules [S]. Beijing:China Standard Press, 1981. (in Chinese)
聂志强, 王明培, 孙玉博, 李小宁, 吴迪. 传导冷却高功率半导体激光器单巴器件CW工作模式下的热加速寿命试验[J]. 发光学报, 2019, 40(9): 1136. NIE Zhi-qiang, WANG Ming-pei, SUN Yu-bo, LI Xiao-ning, WU Di. Thermally Accelerated Aging Test of Conduction-cooled-packaged High Power Diode Laser Bar in CW Mode[J]. Chinese Journal of Luminescence, 2019, 40(9): 1136.