Y1Ba2Cu3O7-x半导体薄膜的红外热辐射响应研究

采用直流磁控溅射后退火法制备了Y₁Ba₂Cu₃O_7-x/Si和Y₁Ba₂Cu₃O_7-x/ZrO2/SiO2两种半导体薄膜,对该薄膜进行了红外热辐射响应特性研究.采用X射线衍射、电阻温度系数法、喇曼散射表征手段对薄膜的显微结构进行了详细分析.结果表明,有过渡层的Y₁Ba₂Cu₃O_7-x半导体薄膜均匀性好,信噪比高,在红外波段和亚毫米波段甚至毫米波段都有良好的热辐射响应,适于制做非制冷探测器的敏感元.

Abstract

Y₁Ba₂Cu₃O_7-xsemiconductive thin film with different buffers is manufactured by current magnetic sputtering with direct and annealing method, and their IR thermal radialization responses are studied. The microstructure of Y₁Ba₂Cu₃O_7-x thin film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y₁Ba₂Cu₃O_7-x film are measured. The results show that the uniformity of the semiconductive Y₁Ba₂Cu₃O_7-x thin films with buffer layer is better and their signaltonoise ratio is higher. Y₁Ba₂Cu₃O_7-x has good speciality for its thermal radiation response in IR band and has good performance in submillimeter band, even in millimeter band. It will become new sensor elements of IR bolometer working at room temperature

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李然, 刘桂霞, 李冰冰, 孙强. Y₁Ba₂Cu₃O_7-x半导体薄膜的红外热辐射响应研究[J]. 红外与激光工程, 2003, 32(3): 259. 李然, 刘桂霞, 李冰冰, 孙强. Study on IR thermal radiation response of Y₁Ba₂Cu₃O_7-x semiconductive thin film[J]. Infrared and Laser Engineering, 2003, 32(3): 259.

Y₁Ba₂Cu₃O_7-x半导体薄膜的红外热辐射响应研究

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