带隙渐变纳米线的光电导淬灭效应

采用气相沉积温度梯度分布合成纳米线法, 在750~950℃耐高温石英管中, 在催化剂金的催化作用下, 生长出310μm带隙渐变的硫硒化镉半导体纳米线, 并利用倏逝波耦合的方法导波激发, 分别对不同掺杂比例的部分纳米线进行研究。实验发现, 在注入功率低于10-8W时, 随着光强增大不同带隙宽度的纳米线的淬灭度都在增大; 然而在注入功率继续增大时, S元素比例占到90%的纳米线的淬灭度峰值最早到来, 以Se元素为主的纳米线的淬灭度峰值在10-6W注入光下仍未出现, 原因是增加S元素会使更多的复合中心转变为陷阱能级中心, 更多的电子可以跃迁至导带。封装上电极的带隙渐变纳米线可应用于制作高分辨率的红外光探测器, 也为有效检测半导体材料的缺陷能级提供了便利。

Abstract

The method of vapor and temperature gradient distribution was used to grow nanowire. In 750~950℃ quartz tube, by means of the gold catalysis, CdSSe semiconductor nanowires of 310μm gradient band gap were grown. Using the evanescent wave coupling method to guide wave excitation, the quenching effect of different component parts of the nanowire was studied. It is found that when the power injection is below 10-8W, the quenching degree will increase with increasing light intensity of different band gap nanowires. However, the quenching degree peak of the nanowires with 90% S elements proportion arrivals the earliest. And even under 10-6W injection light, the quenching degree peak of Se element still does not appear. The reason is that with the increasing of S elements, more recombination centers turn into the trap energy level centers, so more electrons can jump to the conduction band. The nanowire with gradient band gap fabricated with electrodes can be used to make high resolution infrared detectors, and provide convenience for detecting the defect level of semiconductor materials effectively.

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刘敦伟, 袁光立, 安辉耀, 石雪梅, 于涛. 带隙渐变纳米线的光电导淬灭效应[J]. 半导体光电, 2018, 39(2): 206. LIU Dunwei, YUAN Guangli, AN Huiyao, SHI Xuemei, YU Tao. Magical Quenching Effect of Gradient Band Gap CdSSe Nanowire[J]. Semiconductor Optoelectronics, 2018, 39(2): 206.

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