[1] Wu B, Kumar A. Extreme ultraviolet lithography: a review［J］. Journal of Vacuum Science & Technology B, 2007, 25(6): 1743-1761.

[2] Pirati A, Peeters R, Smith D, et al. Performance overview and outlook of EUV lithography systems［C］. SPIE, 2015, 9422: 94221P.

[3] Turkot B, Carson S L, Lio A, et al. EUV progress toward HVM readiness［C］. SPIE, 2016, 9776: 977602.

[4] Erdmann A, Fühner T, Evanschitzky P, et al. Optical and EUV projection lithography: a computational view［J］. Microelectronic Engineering, 2015, 132: 21-34.

[5] Mack C, Jones R, Byers J. Computer-implemented method and carrier medium configured to generate a set of process parameters for a lithography process: US, 6968253［P］. 2005-11-22.

[6] Cao Y, Wang X, Tu Y, et al. Impact of mask absorber thickness on the focus shift effect in extreme ultraviolet lithography［J］. Journal of Vacuum Science & Technology B, 2012, 30(3): 031602.

[7] Erdmann A, Evanschitzky P, Shao F, et al. Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects［C］. SPIE, 2011, 8171: 81710M.

[8] Viala A, Erdmanna A, Schmoellerb T, et al. Modification of boundaries conditions in the FDTD algorithm for EUV masks modeling［C］. SPIE, 2002, 4754: 890-899.

[9] Schiavone P, Granet G, Robic J Y. Rigorous electromagnetic simulation of EUV masks: influence of the absorber properties［J］. Microelectronic Engineering, 2001, 57(3): 497-503.

[10] Zhu Z, Lucas K, Cobb J L, et al. Rigorous EUV mask simulator using 2D and 3D waveguide methods［C］. SPIE, 2003, 5037: 494-503.

[11] Evanschitzky P, Erdmann A. Three dimensional EUV simulations - a new mask near field and imaging simulation system［C］. SPIE, 2005, 5992: 59925B.

[12] 曹宇婷, 王向朝, 步 扬. 极紫外光刻接触孔掩模的快速仿真计算［J］. 光学学报, 2012, 32(7): 0705001.

    Cao Yuting, Wang Xiangzhao, Bu Yang. Fast simulation model for contact hole mask in extreme-ultraviolet lithography［J］. Acta Optica Sinica, 2012, 32(7): 0705001.

[13] Lam M C, Neureuther A R. Simplified model for absorber feature transmissions on EUV masks［C］. SPIE, 2006, 6349: 63492H.

[14] Tirapu-Azpiroz J, Burchard P, Yablonovitch E. Boundary layer model to account for thick mask effects in photolithography［C］. SPIE, 2003, 5040: 1611-1619.

[15] Gullikson E M, Cerjan C, Stearns D G, et al. Practical approach for modeling extreme ultraviolet lithography mask defects［J］. Journal of Vacuum Science & Technology B, 2002, 20(1): 81-86.

[16] Clifford C H, Neureuthe A R. Smoothing based model for images of isolated buried EUV multilayer defects［C］. SPIE, 2008, 6921: 692119.

[17] Clifford C H, Neureuther A R. Fast simulation methods and modeling for extreme ultraviolet masks with buried defects［J］. Journal of Micro/Nanolithography Mems & Moems, 2009, 8(3): 031402.

[18] Lam M C, Neureuther A R. Fast simulation methods for defective EUV mask blank inspection［C］. SPIE, 2004, 5567: 741-750.

[19] Evanschitzky P, Erdmann A, Besacier M, et al. Simulation of extreme ultraviolet masks with defective multilayers［C］. SPIE, 2003, 5130: 1035-1045.

[20] 刘晓雷, 李思坤, 王向朝. 基于等效膜层法的极紫外光刻含缺陷掩模多层膜仿真模型［J］. 光学学报, 2015, 35(6): 0622005.

    Liu Xiaolei, Li Sikun, Wang Xiangzhao. Simulation model based on equivalent layer method for defective mask multilayer in extreme ultra violet lithography［J］. Acta Optica Sinica, 2015, 35(6): 0622005.

[21] Adam K. Domain decomposition methods for the electromagnetic simulation of scattering from three-dimensional structures with applications in lithography［D］. Berkeley: University of California, 2001.

[22] Erdmann A, Kalus C K, Schmoeller T, et al. Efficient simulation of light diffraction from 3-dimensional EUV-masks using field decomposition techniques［C］. SPIE, 2003, 5037: 482-493.

[23] Mailfert J, Zuniga C, Philipsen V, et al. 3D mask modeling for EUV lithography［C］. SPIE, 2012, 8322: 832224.

[24] Evanschitzky P, Erdmann A. Fast near field simulation of optical and EUV masks using the waveguide method［C］. SPIE, 2007, 6533: 65330Y.

[25] 王仕璠. 信息光学理论与应用［M］. 北京: 北京邮电大学出版社, 2003: 31-32.

    Wang Shifan. Theory and application of information optics［M］. Beijing: BUPT Press, 2003: 31-32.

[26] Lucas K, Tanabe H, Strojwas J. Efficient and rigorous three-dimensional model for optical lithography simulation［J］. Journal of the Optical Society of America A, 1996, 13(11): 2187-2199.

[27] 周新江. 基于变量分离理论的光刻成像快速计算方法研究［D］. 武汉: 华中科技大学, 2015: 40-43.

    Zhou Xinjiang. Theory and method for fast simulation of optical image in lithography based on the method of separation of variables［D］. Wuhan: Huazhong University of Science and Technology, 2015: 40-43.

[28] Fühner T, Schnattinger T, Ardelean G. Dr. LiTHO-a development and research lithography simulator［C］. SPIE, 2007, 6520: 65203F.