液晶与显示, 2009, 24 (3): 340, 网络出版: 2010-01-22  

耦合ZnO/MgxZn1-xO量子点中的激子态和带间光跃迁

Exciton States and Interband Transitions in Wurtzite ZnO/MgxZn1-xO Coupled Quantum Dots
作者单位
河南师范大学 物理与信息工程学院,河南 新乡 453007
摘要
在有效质量近似和变分原理的基础上,考虑量子点的三维约束效应和内建电场,研究了ZnO/MgxZn1-xO耦合量子点中激子结合能、带间光跃迁能以及电子-空穴复合率随量子点结构参数(量子点高度和势垒层厚度)的变化。结果表明:激子结合能、带间光跃迁能和电子-空穴复合率随量子点高度或势垒层厚度的增加而降低。
Abstract
Within the framework of the effective-mass approximation,this paper presents a three-dimensional study of the exciton in ZnO/MgxZn1-xO vertically coupled quantum dots (QDs) by a variational approach.The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered.Our numerical results show that the exciton binding energy,the QD transition energy and the electron-hole recombination rate are reduced monotonically when the dot height and the barrier thickness between the coupled wurtzite ZnO QDs are increased.
参考文献

[1] 危书义,王雁,魏玲玲.纤锌矿GaN/ZnO量子阱中的界面声子[J].液晶与显示,2008,23(2):132-135.

[2] . Photoluminescence of ZnO quantum dots produced by a sol-gel process[J]. Optical Materials, 2008, 30(8): 1233-1239.

[3] . Changes of structure and optical energy gap induced by oxygen pressure during the deposition of ZnO films[J]. Phys.B, 2006, 381(16): 109-112.

[4] 王志军,李守春,吕有明.变分方法研究ZnO量子点中激子的基态特性 [J].发光学报,2006,27(2):225-228.

[5] Xia C X,Shi J J,Wei S Y.Exciton states in wurtzite InGaN coupled quantum dot [J].China Phys.Lett., 2004,21(8):1620-1623.

[6] 危书义,杨艳玲,夏从新,等.耦合GaN/AlxGa1-xN量子点的非线性光学性质 [J].液晶与显示,2007,22(3):240-244.

[7] . Wannier excitons in low-dimension microstructures:Shape dependence of the quantum size effect[J]. Phys.Rev.B, 1991, 44(23): 13085-13088.

[8] . Band parameters for Ⅲ-Ⅴcompound semiconductors and theiralloys[J]. J.Appl.Phys., 2001, 89(11): 5815-5875.

[9] Zhang B P,Kang J Y,Yu J Z,et al.Growth and optical properties of ZnO films and quantum wells [J].Chin.J.Semiconductors,2006,27(4):613-622.

[10] . Crystal orientation effects on electronic and optical properties of wurtzite ZnO/MgZnO quantum well lasers[J]. Optical and Quantum Electronics, 2006, 38(12): 935-952.

[11] . Exciton states and interband optical transitions in ZnO/MgZnO quantum dots[J]. J.Lumin., 2008, 128: 1285-1290.

[12] . MBE growth of wideband gap wurtzite MgZnO quasi-alloys with MgO/ZnO superlattices for deep ultraviolet optical functions[J]. J.Crystal Growth, 2005, 278(1): 264-267.

[13] . First-principles study of polarization in Zn1-xMgxO[J]. Phys.Review B, 2007, 75(4): 45106-45110.

[14] . Excitonic transitions in ZnO/MgZnO quantum well heterostructures[J]. Appl.Phys.Lett., 2001, 78(19): 2861-2863.

[15] . Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots[J]. J.Lumin., 2006, 118(2): 139-146.

危书义, 卫国红, 孙永灿, 赵建华. 耦合ZnO/MgxZn1-xO量子点中的激子态和带间光跃迁[J]. 液晶与显示, 2009, 24(3): 340. WEI Shu-yi, WEI Guo-hong, SUN Yong-can, ZHAO Jian-hua. Exciton States and Interband Transitions in Wurtzite ZnO/MgxZn1-xO Coupled Quantum Dots[J]. Chinese Journal of Liquid Crystals and Displays, 2009, 24(3): 340.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!