光学学报, 2010, 30 (s1): s100107, 网络出版: 2010-12-21  

温度对基于金辅助金属氧化物化学汽相沉积生长的GaAs纳米线影响

Effect of Growth Temperature on GaAs Nanowires Formed by Au-Assisted MOCVD
作者单位
北京邮电大学信息光子学与光通信教育部重点实验室, 北京 100876
引用该论文

郭经纬, 黄辉, 叶显, 任晓敏, 蔡世伟, 王伟, 王琦, 黄永清, 张霞. 温度对基于金辅助金属氧化物化学汽相沉积生长的GaAs纳米线影响[J]. 光学学报, 2010, 30(s1): s100107.

Guo Jingwei, Huang Hui, Ye Xian, Ren Xiaomin, Cai Shiwei, Wang Wei, Wang Qi, Huang Yongqing, Zhang Xia. Effect of Growth Temperature on GaAs Nanowires Formed by Au-Assisted MOCVD[J]. Acta Optica Sinica, 2010, 30(s1): s100107.

参考文献

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郭经纬, 黄辉, 叶显, 任晓敏, 蔡世伟, 王伟, 王琦, 黄永清, 张霞. 温度对基于金辅助金属氧化物化学汽相沉积生长的GaAs纳米线影响[J]. 光学学报, 2010, 30(s1): s100107. Guo Jingwei, Huang Hui, Ye Xian, Ren Xiaomin, Cai Shiwei, Wang Wei, Wang Qi, Huang Yongqing, Zhang Xia. Effect of Growth Temperature on GaAs Nanowires Formed by Au-Assisted MOCVD[J]. Acta Optica Sinica, 2010, 30(s1): s100107.

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