半导体光电, 2015, 36 (5): 708, 网络出版: 2015-11-30  

不同偏置条件下光电耦合器的总剂量效应

Total Dose Effect on Optocoupler under Different Bias Conditions
作者单位
西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安710024
摘要
开展了4N49光电耦合器不同辐照偏置条件下的辐照实验,结果表明:电流传输比的下降幅度与辐照期间的偏置条件有关,处于工作状态的光电耦合器比短路状态的总剂量效应要弱,其根源是光电耦合器的LED施加了电流,而与光敏晶体管的偏置状态关系不大;电流传输比随偏置条件的变化关系是由初级光电流决定的,而CB区光响应度是初级光电流退化的主导因素。
Abstract
60Co irradiation on 4N49 optocouplers was developed under different bias conditions. The experimental results show that the degradation of current transfer ratio at a given total dose depends on bias condition during irradiation,and the degradation is lower under the condition of working than shortcircuit. The main reason comes from the current biased on LED and has little relation with phototransistor’s bias condition. The dependence of CTR on bias condition stems from primary photocurrent,and primary photocurrent degradation may be mainly attributed to the photoresponse degradation in CB region of phototransistor.
参考文献

[1] Soda K J,Barnes C E,Kiehl R A. The effect of gamma irradiation on optical isolators[J]. IEEE Trans. on Nuclear Science,1975,NS22(6):24752481.

[2] Mangeret R,Bonora R,Bouchet T,et al. Radiation characterization and test methodology study of optocouplers devices for space applications[C]// IEEE 2001 6th European Conf. on Radiation and Its Effects on Components and Systems,2002:166171.

[3] 李应辉,陈春霞,蒋 城,等.光电耦合器辐照损伤的噪声检测[J].半导体光电,2008,29(3):332-335. Li Yinghui,Chen Chunxia,Jiang Cheng,et al. Noise diagnosis for radiation damage of optocoupler[J]. Semiconductor Optoelectronics,2008,29(3):332335.

[4] 林丽艳,杜 磊,包军林,等.光电耦合器电离辐射损伤电流传输比1/f噪声表征[J].物理学报,2011,60(4):047202-1-047202-7. Lin Liyan,Du Lei,Bao Junlin,et al. Noise as a characteriscic for current transmitting rate of optoelectronic coupled devices for ionization radiation damage[J]. Acta Physica Sinica,2011,60(4):04720210472027.

[5] 何玉娟,罗宏伟,恩云飞. 偏压条件对光耦合器总剂量辐照效应的影响[J]. 电子器件,2011,34(5):511-513. He Yujuan,Luo Hongwei,En Yunfei. Effect of bias on total dose effect of optical couplers[J]. Chinese J. Electron Devices,2011,34(5):511513.

[6] 黄绍艳,刘敏波,王祖军,等.光敏晶体管的中子位移损伤效应研究[J]. 原子能科学技术,2011,45(5):619-623. Huang Shaoyan,Liu Minbo,Wang Zujun,et al. Study on neutron displacement damage effect in phototransistor[J]. Atomic Energy Science and Technol.,2011,45(5):619623.

[7] 黄绍艳,刘敏波,肖志刚,等. 激光二极管的位移损伤效应研究[J]. 半导体光电,2011,32(2):195-199. Huang Shaoyan,Liu Minbo,Xiao Zhigang,et al. Study on displacement damage effects of laser diodes[J]. Semiconductor Optoelectronics,2011,32(2):195199.

[8] Friebele E J,Gingerich M E. Photobleaching effects in optical fiber waveguides[J]. Appl. Opt.,1981,20(19):34483452.

[9] Sigel G H,Friebele E J,Marron M J,et al. An analysis of photobleaching techniques for the radiation hardening of fiber optic data links[J]. IEEE Trans. on Nuclear Science,1981,28(6):40954101.

[10] Reed R.Guideline for ground radiation testing and using optocouplers in the space radiation environment\[R\]. Nasa Nepp Program Erc Project Report,2002.

黄绍艳, 刘敏波, 盛江坤, 姚志斌, 王祖军, 何宝平, 肖志刚, 唐本奇. 不同偏置条件下光电耦合器的总剂量效应[J]. 半导体光电, 2015, 36(5): 708. HUANG Shaoyan, LIU Minbo, SHENG Jiangkun, YAO Zhibin, WANG Zujun, HE Baoping, XIAO Zhigang, TANG Benqi. Total Dose Effect on Optocoupler under Different Bias Conditions[J]. Semiconductor Optoelectronics, 2015, 36(5): 708.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!