量子电子学报, 2011, 28 (6): 742, 网络出版: 2011-12-05
4H-SiC雪崩光电探测器中倍增层参数的优化模拟
Optimal simulation of parameters for multiplication layer of 4H-SiC avalanche photodiode
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钟林瑛, 洪荣墩, 林伯金, 蔡加法, 陈厦平, 吴正云. 4H-SiC雪崩光电探测器中倍增层参数的优化模拟[J]. 量子电子学报, 2011, 28(6): 742. ZHONG Lin-ying, HONG Rong-dun, LIN BO-jin, CAI Jia-fa, CHEN Xia-ping, WU Zheng-yun. Optimal simulation of parameters for multiplication layer of 4H-SiC avalanche photodiode[J]. Chinese Journal of Quantum Electronics, 2011, 28(6): 742.
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