光电技术应用, 2020, 35 (6): 36, 网络出版: 2021-02-05  

单层二硫化钼在空位缺陷下的可饱和吸收性

Saturable Absorption of MoS2 under Vacancy Defect
作者单位
1 河北工业大学 电子信息工程学院 先进激光技术研究中心, 天津 300401
2 河北工业大学 机械工程学院, 天津 300401
引用该论文

杨健, 刘硕, 白振旭, 俎群. 单层二硫化钼在空位缺陷下的可饱和吸收性[J]. 光电技术应用, 2020, 35(6): 36.

YANG Jian, LIU Shuo, BAI Zhen-xu, ZU Qun. Saturable Absorption of MoS2 under Vacancy Defect[J]. Electro-Optic Technology Application, 2020, 35(6): 36.

参考文献

[1] Yu S, Wu X, Wang Y, et al. 2D Materials for optical modulation: challenges and opportunities[J]. Advanced Materials, 2017, 29(14): 1606128.

[2] Lee P A. Optical and electrical properties[J]. physics & chemistry of Materials with A, 2004, 4(11): 1529-1530.

[3] Feng C, Ma J, Li H, et al. Synthesis of molybdenum disulfide (MoS2) for lithium ion battery applications[J]. Materials Research Bulletin, 2009, 44(9): 1811-1815.

[4] Yoon Y, Ganapathi K, Salahuddin S. How good can monolayer MoS2[J]. Nano Letters, 2011, 11(9): 3768-3773.

[5] He Q, Zeng Z, Yin Z, et al. Fabrication of flexible MoS2 thin-film rransistor arrays for practical gas-sensing applications[J]. Small, 2012, 8(19): 2994-2999.

[6] Yin Z, Li H, Li H, et al. Single-layer MoS2 phototransistors[J]. Acs nano, 2012, 6(1): 74-80.

[7] Wang K, Wang J, Fan J, et al. Ultrafast saturable absorption of two-dimensional MoS2 nanosheets[J]. Acs Nano, 2013, 7(10): 9260.

[8] Bonaccorso F, Sun Z. Solution processing of graphene, topological insulators and other 2d crystals for ultrafast photonics[J]. Optical Materials Express, 2013, 4 (1): 63-78.

[9] Ouyang Q, Yu H, Zhang K, et al. Saturable absorption and the changeover from saturable absorption to reverse saturable absorption of MoS2 nanoflake array films[J]. Journal of Materials Chemistry C, 2014, 2(31): 6319.

[10] Malard L M, Pimenta M A, Dresselhaus G, et al. Raman spectroscopy in graphene[J]. Physics Reports, 2009, 473(5): 51-87.

[11] H Q, T X, Z W, et al. Hopping transport through defect-induced localized states in molybdenum disulphide[J]. Nature Communications, 2013, 4(26): 42.

[12] S T, J S, C A, et al. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons[J]. Scientific Reports, 2013, 3(26): 57.

[13] Han Y X, Yang C-L, Sun Y-T, et al. The novel optical properties of CdS caused by concentration of impurity Co[J]. Journal of Alloys&Compounds, 2014, 585: 503-509.

杨健, 刘硕, 白振旭, 俎群. 单层二硫化钼在空位缺陷下的可饱和吸收性[J]. 光电技术应用, 2020, 35(6): 36. YANG Jian, LIU Shuo, BAI Zhen-xu, ZU Qun. Saturable Absorption of MoS2 under Vacancy Defect[J]. Electro-Optic Technology Application, 2020, 35(6): 36.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!