光子学报, 2018, 47 (4): 0423002, 网络出版: 2018-03-15
三级台面InGaAs/InP雪崩光电二极管的低边缘电场设计
Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field
图 & 表
朱帅宇, 谢生, 陈宇. 三级台面InGaAs/InP雪崩光电二极管的低边缘电场设计[J]. 光子学报, 2018, 47(4): 0423002. ZHU Shuai-yu, XIE Sheng, CHEN Yu. Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field[J]. ACTA PHOTONICA SINICA, 2018, 47(4): 0423002.