Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang; Bing Wang; Riko I. Made; Soon-Fatt Yoon; Jurgen Michel

doi:doi:10.1364/PRJ.5.000239

Photonics Research, 2017, 5 (3): 03000239, Published Online: Oct. 9, 2018

Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 711次

Cong Wang ^1,2Bing Wang ²Riko I. Made ²Soon-Fatt Yoon ^1,2Jurgen Michel ^2,3,*

Author Affiliations

¹ School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

² Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Massachusetts 02139, USA

Basic Information

DOI:	10.1364/PRJ.5.000239
中图分类号:	--
栏目:	Research Articles
项目基金:	National Research Foundation Singapore (NRF)10.13039/501100001381
收稿日期:	Jan. 30, 2017
修改稿日期:	Mar. 27, 2017
网络出版日期:	Oct. 9, 2018
通讯作者:	Jurgen Michel (jmichel@mit.edu)
备注:	--

Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 03000239.

Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 711次

关于本站 Cookie 的使用提示

全站搜索

Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 711次

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索