Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang; Bing Wang; Riko I. Made; Soon-Fatt Yoon; Jurgen Michel

doi:doi:10.1364/PRJ.5.000239

Photonics Research, 2017, 5 (3): 03000239, Published Online: Oct. 9, 2018

Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 711次

Cong Wang ^1,2Bing Wang ²Riko I. Made ²Soon-Fatt Yoon ^1,2Jurgen Michel ^2,3,*

Author Affiliations

¹ School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

² Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Massachusetts 02139, USA

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Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 03000239.

References

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Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 03000239.

Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 711次

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