Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang; Bing Wang; Riko I. Made; Soon-Fatt Yoon; Jurgen Michel

doi:doi:10.1364/PRJ.5.000239

Photonics Research, 2017, 5 (3): 03000239, Published Online: Oct. 9, 2018

Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 710次

Cong Wang ^1,2Bing Wang ²Riko I. Made ²Soon-Fatt Yoon ^1,2Jurgen Michel ^2,3,*

Author Affiliations

¹ School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

² Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Massachusetts 02139, USA

Figures & Tables

Fig. 1. (a) [110]-pole TEM pattern of fully disordered lightly Te-doped Ga0.74In0.26P sample with n=7×1016 cm−3. (b) SEM image of the etch pits of Ga0.74In0.26P film, and EPD=(3±0.5)×106 cm−2.

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Fig. 2. Temperature-dependent normalized PL spectra (6–300 K) of Te-doped Ga0.74In0.26P samples with (a) n=7×1016 cm−3, (b) n=9×1017 cm−3, and (c) n=2×1018 cm−3. The positions of NPx, LAx, and DAP emission peaks from Ref. [3] are labeled, and their positions are indicated by dashed black lines. Solid red lines and arrows indicate the positions of direct band emission, shifting with increasing temperature.

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Fig. 3. Peak positions of Te-doped Ga0.74In0.26P samples versus temperature. The data points marked with green stars are from Ref. [3]. Dashed lines are fitted to derive the thermal coefficients of the Γ band.

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Fig. 4. Temperature-dependent PL spectra (175–300 K) of Te-doped Ga0.74In0.26P samples with (a) S01, n=7×1016 cm−3, (b) S02, n=9×1017 cm−3, and (c) S03, n=2×1018 cm−3.

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Fig. 5. Arrhenius plot of integrated PL intensity versus temperature for Te-doped Ga0.74In0.26P samples with n=9×1017 cm−3 (red dots) and n=2×1018 cm−3 (blue diamonds). The activation energies, Ea, were derived from the fitted dashed lines.

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Fig. 6. Integrated PL intensity (black squares) of Te-doped Ga0.74In0.26P samples and their corresponding peak emission energy (blue circles) versus doping concentration at room temperature. Curve fitting (blue solid line) shows an approximate linear regression of emission energy with increasing doping concentration due to BGN effect.

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Fig. 7. (a) XTEM image of Te-doped Ga0.74In0.26P sample at n=5×1018 cm−3. (b) Scanning XTEM image at high resolution.

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Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel. Direct bandgap photoluminescence from n-type indirect GaInP alloys[J]. Photonics Research, 2017, 5(3): 03000239.

Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 710次

Fig. 1. (a) [110]-pole TEM pattern of fully disordered lightly Te-doped Ga0.74In0.26P sample with n=7×1016 cm−3. (b) SEM image of the etch pits of Ga0.74In0.26P film, and EPD=(3±0.5)×106 cm−2.

Fig. 3. Peak positions of Te-doped Ga0.74In0.26P samples versus temperature. The data points marked with green stars are from Ref. [3]. Dashed lines are fitted to derive the thermal coefficients of the Γ band.

Fig. 4. Temperature-dependent PL spectra (175–300 K) of Te-doped Ga0.74In0.26P samples with (a) S01, n=7×1016 cm−3, (b) S02, n=9×1017 cm−3, and (c) S03, n=2×1018 cm−3.

Fig. 5. Arrhenius plot of integrated PL intensity versus temperature for Te-doped Ga0.74In0.26P samples with n=9×1017 cm−3 (red dots) and n=2×1018 cm−3 (blue diamonds). The activation energies, Ea, were derived from the fitted dashed lines.

Fig. 7. (a) XTEM image of Te-doped Ga0.74In0.26P sample at n=5×1018 cm−3. (b) Scanning XTEM image at high resolution.

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Direct bandgap photoluminescence from n-type indirect GaInP alloys Download： 710次

Fig. 1. (a) [110]-pole TEM pattern of fully disordered lightly Te-doped Ga0.74In0.26P sample with n=7×1016 cm−3. (b) SEM image of the etch pits of Ga0.74In0.26P film, and EPD=(3±0.5)×106 cm−2.

Fig. 3. Peak positions of Te-doped Ga0.74In0.26P samples versus temperature. The data points marked with green stars are from Ref. [3]. Dashed lines are fitted to derive the thermal coefficients of the Γ band.

Fig. 4. Temperature-dependent PL spectra (175–300 K) of Te-doped Ga0.74In0.26P samples with (a) S01, n=7×1016 cm−3, (b) S02, n=9×1017 cm−3, and (c) S03, n=2×1018 cm−3.

Fig. 5. Arrhenius plot of integrated PL intensity versus temperature for Te-doped Ga0.74In0.26P samples with n=9×1017 cm−3 (red dots) and n=2×1018 cm−3 (blue diamonds). The activation energies, Ea, were derived from the fitted dashed lines.

Fig. 7. (a) XTEM image of Te-doped Ga0.74In0.26P sample at n=5×1018 cm−3. (b) Scanning XTEM image at high resolution.

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