低温GaAs被动调Q锁模Nd:Gd0.42Y0.58VO4混晶激光器特性研究

卓壮; 姜其畅; 王勇刚; 苏艳丽; 李涛; 李建

光学学报, 2006, 26 (1): 77, 网络出版: 2006-04-20

低温GaAs被动调Q锁模Nd:Gd_0.42Y_0.58VO₄混晶激光器特性研究

Study on the Property of Passively Q-Switched Mode-Locked Nd:Gd_0.42Y_0.58VO₄ Mixed Crystal Laser with GaAs Absorber Grown at Low Temperature

卓壮 ^1,2,*姜其畅 ¹王勇刚 ³苏艳丽 ¹李涛 ¹李建 ¹

作者单位

¹ 山东师范大学物理与电子科学学院, 济南 250014

² 山东大学山大鲁能信息科技有限公司,济南 250100

³ 中国科学院半导体研究所, 北京 100083

引用该论文

卓壮, 姜其畅, 王勇刚, 苏艳丽, 李涛, 李建. 低温GaAs被动调Q锁模Nd:Gd_0.42Y_0.58VO₄混晶激光器特性研究[J]. 光学学报, 2006, 26(1): 77.

卓壮, 姜其畅, 王勇刚, 苏艳丽, 李涛, 李建. Study on the Property of Passively Q-Switched Mode-Locked Nd:Gd_0.42Y_0.58VO₄ Mixed Crystal Laser with GaAs Absorber Grown at Low Temperature[J]. Acta Optica Sinica, 2006, 26(1): 77.

参考文献

[1] Juan Du, Jingliang He, Jie Liu et al.. Q-switching mode-locked diode-pumped Nd∶YVO4 laser with a saturable Bragg reflector[J]. Chin. Opt. Lett., 2004, 2(5): 275～277

[2] . . Comparative study of the mode-locking of Nd∶GdVO4 and Nd∶YAG lasers with semiconductor saturable absorber mirrors[J]. Chin. Opt. Lett., 2003, 1(8): 477-479.

[3] Zhang Lianhan, Hang Yin, Sun Dunlu et al.. Spectral properties of Nd∶Gd0.5Y0.5VO4 crystal[J]. Chin. J. Lasers, 2004, 31(3): 339～341 (in Chinese)
张连翰，杭寅，孙敦陆等. Nd∶Gd0.5Y0.5VO4晶体光谱特性[J]. 中国激光， 2004, 31(3): 339～341

[4] . . Improvement of passive Q-switching performance reached with a new Nd-doped mixed vanadate crystal Nd∶Gd0.64Y0.36VO4[J]. Opt Lett., 2003, 28(23): 2330-2332.

[5] . . 4-ps passively mode-locked Nd∶Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror[J]. Opt Lett., 2004, 29(23): 1-3.

[6] . Kong, D. Y. Tang, S. Ng et al.. Diode-pumped passively mode-locked Nd∶GdVO4 laser with a GaAs saturable absorber mirror[J]. Appl. Phys. (B), 2004, 79(2): 203-206.

[7] Jia Yulei, Wei Zhiyi, Zheng Jiaan et al.. Diode-pumped self-starting mode-locked Nd∶YVO4 laser with semiconductor saturable absorber output coupler[J]. Chin. Phys. Lett., 2004, 21(11): 2209～2211

[8] . Weingarten, Franz X. Kartner et al.. Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers[J]. IEEE J. Selected Topics in Quant. Electron., 1996, 2(3): 435-436.

卓壮, 姜其畅, 王勇刚, 苏艳丽, 李涛, 李建. 低温GaAs被动调Q锁模Nd:Gd_0.42Y_0.58VO₄混晶激光器特性研究[J]. 光学学报, 2006, 26(1): 77. 卓壮, 姜其畅, 王勇刚, 苏艳丽, 李涛, 李建. Study on the Property of Passively Q-Switched Mode-Locked Nd:Gd_0.42Y_0.58VO₄ Mixed Crystal Laser with GaAs Absorber Grown at Low Temperature[J]. Acta Optica Sinica, 2006, 26(1): 77.

低温GaAs被动调Q锁模Nd:Gd_0.42Y_0.58VO₄混晶激光器特性研究

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