半导体光电, 2013, 34 (6): 930, 网络出版: 2014-01-02
基于非辐射复合缺陷测量的GaN基LED老化性能研究
Study on Aging Properties of GaN LEDs Based on the Measurement of Nonradiative Recombination Defect Density
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郭祖强, 钱可元. 基于非辐射复合缺陷测量的GaN基LED老化性能研究[J]. 半导体光电, 2013, 34(6): 930. GUO Zuqiang, QIAN Keyuan. Study on Aging Properties of GaN LEDs Based on the Measurement of Nonradiative Recombination Defect Density[J]. Semiconductor Optoelectronics, 2013, 34(6): 930.