As元素分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响
方俊, 孙令, 刘洁. As元素分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响[J]. 半导体光电, 2018, 39(5): 607.
FANG Jun, SUN Ling, LIU Jie. The Effects of As Molecular State on The Properties of InGaAs/AlGaAs Quantum Well Infrared Photodetector[J]. Semiconductor Optoelectronics, 2018, 39(5): 607.
[1] Rogalski A. Quantum well photoconductors in infrared detector technology[J]. J. of Appl. Phys., 2003, 93(8): 43554391.
[2] Rafol S B, Gunapala S D, Ting D Z, et al. Low frequency 1/f noise on QWIPs, nBn and superlattice focal plane array[J]. Infrared Phys. & Technol., 2017, 84: 5057.
[3] Belhaire E, Pichon R. Advantages of QWIP technology in infrared thermal cameras[J]. J. of Appl. Opt., 2017, 38(2): 298303.
[4] Billaha A, Das M K. Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications[J]. OptoElectron. Rev., 2016, 24(1): 2533.
[5] Roodenko K, Choi K K, Clark K P, et al. Control over the optical and electronic performance of GaAs/AlGaAs QWIPs grown by production MBE[J]. Infrared Phys. & Technol., 2017, 84: 3337.
[6] Sidorov G Y, Mikhaǐlov N N, Varavin V S, et al. Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecularbeam epitaxy[J]. Semiconductors, 2008, 42(6): 651654.
[7] Iha H, Hirota Y, Yamauchi M, et al. Effect of arsenic cracking on In incorporation into MBEgrown InGaAs layer[J]. Phys. Status Solidi, 2015, 12(6): 524527.
[8] Künzel H, Ploog K. The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs[J]. Appl. Phys. Lett., 2008, 37(4): 416418.
[9] Nedelcu A, Guériaux V, Dua L, et al. A high performance quantumwell infrared photodetector detecting below 4.1μm[J]. Semiconductor Science & Technol., 2009, 24(4): 045006.
[10] Li B L, Feng Y, Chen K Q. Inelastic electronic resonant transport in singlemolecule devices[J]. Organic Electron., 2018, 54: 8993.
[11] 胡小英, 刘卫国, 段存丽, 等. GaAs/Al0.3Ga0.7As QWIP暗电流特性HRTEM研究[J]. 红外与激光工程, 2014, 43(9): 30573060.
Hu Xiaoying, Liu Weiguo, Duan Cunli, et al. Dark current of GaAs/Al0.3Ga0.7As quantum well infrared photodetector by HRTEM[J]. Infrared and Laser Engin., 2014, 43(9): 30573060.
[12] 李 娜, 金 莉. GaAs/AlxGa1-xAs量子阱能级结构设计与光谱分析[J]. 物理学报, 2000, 49(4): 797801.
Li Na, Jin Li. Design and measurement of GaAs/AlxGa1-xAs quantum well structure[J]. J. of Phys., 2000, 49(4): 797801.
方俊, 孙令, 刘洁. As元素分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响[J]. 半导体光电, 2018, 39(5): 607. FANG Jun, SUN Ling, LIU Jie. The Effects of As Molecular State on The Properties of InGaAs/AlGaAs Quantum Well Infrared Photodetector[J]. Semiconductor Optoelectronics, 2018, 39(5): 607.
PDF全文
