As元素分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响 | 半导体光电 -- 中国光学期刊网

半导体光电, 2018, 39 (5): 607, 网络出版: 2019-01-10

As元素分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响

The Effects of As Molecular State on The Properties of InGaAs/AlGaAs Quantum Well Infrared Photodetector

论文大纲

方俊 ^1,2孙令 ^1,2刘洁 ^1,2

作者单位

¹ 中国科学院物理研究所北京凝聚态物理国家研究中心清洁能源重点实验室, 北京 100190

² 中国科学院大学物理学院, 北京 100049

分子束外延 InGaAs/AlGaAs量子阱红外探测器 As元素分子态暗电流 molecular beam epitaxy InGaAs/AlGaAs quantum well infrared photodetector arsenic molecular state dark current

摘要

对As2和As4两种不同分子态下利用分子束外延技术(MBE)生长的单层AlGaAs薄膜和GaAs基InGaAs/AlGaAs量子阱红外探测器（QWIP）的性能进行了研究, 发现As2条件下生长的单层AlGaAs材料荧光强度更大、深能级缺陷密度更低; 相对于As4较为复杂的吸附、生长机制引入的缺陷, 在As2条件下生长的InGaAs/AlGaAs QWIP具有更低的暗电流密度、更好的黑体响应、更高的比探测率和更优异的器件均匀性。生长制备的InGaAs/AlGaAs QWIP在60K的工作温度、-2V偏压下, 暗电流密度低至7.8nA/cm2, 光谱响应峰值波长为3.59μm, 4V偏压下峰值探测率达到1.7×1011cm·Hz1/2·W-1。另外, 通过As元素的不同分子态下InGaAs/AlGaAs QWIP光响应谱峰位的移动可以推断出As元素的不同分子态也会影响In的并入速率。

Abstract

In this paper, by using molecular beam epitaxy (MBE) technique, the properties of single AlGaAs film and Gabased InGaAs/AlGaAs quantum well infrared photodetector (QWIP) grown under As2 and As4 molecular beam species were studied. It is found that the single AlGaAs film using As2 molecular beam species shows larger photoluminescence intensity and less deep level defect density. The InGaAs/AlGaAs QWIP yields lower dark current density, better blackbody responses, higher specific detectivity and better uniformity when As2 instead of As4 beams is used. The difference is attributed to the introduced defects during the growth because of the relatively complicated adsorption mechanism and growth mechanism of As4 mode. By measuring the InGaAs/AlGaAs QWIP, the dark current density is as low as 7.8nA/cm2 on the condition of 60K temperature and -2V bias; the spectral response peak wavelength locates at 3.59μm and peak detectivity reaches 1.7×1011cm·Hz1/2·W-1 under 4V bias. In addition, as the spectral response peak wavelength removes when the arsenic species is altered, it can be inferred that the incorporation coefficients of In is affected by arsenic species.

参考文献

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方俊, 孙令, 刘洁. As元素分子态对InGaAs/AlGaAs量子阱红外探测器性能的影响[J]. 半导体光电, 2018, 39(5): 607. FANG Jun, SUN Ling, LIU Jie. The Effects of As Molecular State on The Properties of InGaAs/AlGaAs Quantum Well Infrared Photodetector[J]. Semiconductor Optoelectronics, 2018, 39(5): 607.

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