激光与光电子学进展, 2019, 56 (11): 110003, 网络出版: 2019-06-13 复制并引用该论文  本文已被引 3 次  被引通知

图 & 表

图 1. 光谱烧孔示意图

Fig. 1. Diagram of spectral hole-burning

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图 2. 入射激光与光谱烧孔相互作用示意图。(a)激光频率与光谱烧孔中心频率相同;(b)激光频率大于光谱烧孔中心频率;(c)激光频率小于光谱烧孔中心频率

Fig. 2. Diagram of interaction between incident laser and spectral hole-burning. (a) Laser frequency equal to central frequency of spectral hole-burning; (b) laser frequency higher than central frequency of spectral hole-burning; (c) laser frequency lower than central frequency of spectral hole-burning

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图 3. 光谱烧孔离子能级结构图

Fig. 3. Energy-level structure of ions for spectral hole-burning

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图 4. 光谱烧孔稳频实验装置图

Fig. 4. Experimental setup of laser frequency stabilization based on spectral hole-burning effect

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图 5. 有F-P腔预稳的光谱烧孔稳频实验装置图

Fig. 5. Experimental setup of laser frequency stabilization based on spectral hole-burning effect with pre-stabilization on F-P cavity

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表 1基于低温稀土离子掺杂晶体光谱烧孔效应的激光稳频技术的研究材料

Table1. Materials for laser frequency stabilization based on spectral hole-burning effect in cryogenic rare-earth-ion-doped crystals

Ion Lockedwavelength /nm Energy-level-transition Hostmaterial Eu3+ 580 7F0→5D0 Y2SiO5 Tm3+ 793 3H6→3H4 YAG、CaF2 Er3+ 1550 4I15/2→4I13/2 Y2SiO5 Pr3+ 606 3H4→1D2 Y2SiO5

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表 2基于低温稀土离子掺杂晶体光谱烧孔效应的激光稳频技术研究进展

Table2. Research progress on laser frequency stabilization based on spectral hole-burning effect in cryogenic rare- earth-ion-doped crystals

Year Team Laser Stabilizationwavelength /nm Spectral Hole-burningmaterial Result Method 1999 Montana StateUniversity, USA External cavitydiode laser 798 Tm3+∶CaF2 Allandeviation of 780±120 Hzfor 20-50 ms integration time Ref. [19] 2000 Montana StateUniversity, USA External cavitydiode lasers 793 Tm3+∶Y3Al5O12 Stabilization to 20 Hz on10 ms time scale Ref. [20] 2001 Montana StateUniversity, USA Diode lasers 1536 Er3+∶Y2SiO5 Allandeviation of 500 Hzfor 2 ms integration time drift of7 kHz/min over several minutes Ref. [21],[22], [23] 2002 Montana StateUniversity, USA Diode lasers 1537 Er3+∶KTP 200 Hz at 1.5 μm and independentto 20 Hz at 793 nm over10 ms integration time Ref. [24] 2003 Montana StateUniversity, USA Diode lasers 1523 Er3+∶D2 ∶CaF2 Frequency stability of 2 kHzto 680 Hz over 20 ms to 500 sintegration time Ref. [25] 2007 Lund Institute ofTechnology, Sweden Dye lasers 606 Pr3+∶Y2SiO5 Frequency stability of1 kHz over 10 μs time scaletogether with long-term frequencydrift below 1 kHz/s Ref. [17] 2007 Montana StateUniversity, USA Single-frequencydiode lasers 1530.4 Er3+∶LiYF4 Allan deviation of 1.5 kHzover 0.05-50 s integration times,with laser frequency drift reducedto less than 1.4 kHz/min Ref. [26] 2011 National Instituteof Standards andTechnology, USA Dye lasers 580 Eu3+∶Y2SiO5 Allan deviation of≤6×10-16 for 2 s≤t≤8 sintegration time Ref. [14] 2013 National Instituteof Standardsand Technology(NIST), USA Dye lasers 580 Eu3+∶Y2SiO5 Short-term frequencystability of 7×10-16τ-1/2that averages down to@204 s integration time Ref. [28] 2015 National Instituteof Standards andTechnology(NIST), USA Dye lasers 580 Eu3+∶Y2SiO5 Fractional frequencyinstability of 1×10-15τ-1/2that averages to @73 sintegration time Ref. [39] 2017 PSL ResearchUniversity,France External cavity diodelasers + frequencydoubling in PPLN 580 Eu3+∶Y2SiO5 Fractional frequencystability of 2×10-14 from1 to 100 s integration time Ref. [40]

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韩琳, 林弋戈, 杨晶, 蓝英杰, 李烨, 王小军, 薄勇, 彭钦军. 基于光谱烧孔效应的激光稳频技术研究与进展[J]. 激光与光电子学进展, 2019, 56(11): 110003. Lin Han, Yige Lin, Jing Yang, Yingjie Lan, Ye Li, Xiaojun Wang, Yong Bo, Qinjun Peng. Research and Development on Laser Frequency Stabilization Based on Spectral Hole-Burning Effect[J]. Laser & Optoelectronics Progress, 2019, 56(11): 110003.