新型复合盖层延伸波长InGaAs红外探测器结构优化设计
[1] Hoogeveen R W M, Vander R W A, Goede A P. Extended wavelength InGaAs infrared (1.0-2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the earth atmosphere [J]. Infrared Phys. Technol., 2001, 42(1):1-16.
[2] Wada M, Hosomatsu H. Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor-phase epitaxy [J]. Appl. Phys. Lett., 1993, 64(10):1265-1267.
[3] Li P. InGaAs/InP photoelectric detector [J]. Infrared (红外), 2004, 10:10-14 (in Chinese).
[4] Webb P P. Properties of avalanche photodiodes [J]. RCA Rev., 1974, 35(4):34-78.
[5] Chen W. PIN avalanche photodiodes model for circuit simulation [J]. IEEE J. Quant. Electron., 1996, 32(12):2105-2111.
[6] Ma F. Monte Carlo simulation of low noise avalanche photo diode with hetero junction [J]. Appl. Phys. Lett., 2002, 92(6):4791-4795.
[7] Karam N H. Triple-junction solar cell efficiencies above 32%: The promise and challenges of their application in high-conceniration-ratio PV systems [J]. IEEE Trans, 2000:955-960.
[8] Christol P, EI Gazouli M, Bigenwald P, et al. Performance simulation of 3.3 μm interband laser diodes grown on InAs substrate [J]. IEEE J., 2002, 14(4):375-384.
[9] Jeon S R, Cho M S, Yu M A. GaN-based light-emitting diodes using tunnel junctions [J]. IEEE J. Select. Top. Quant. Electron., 2002, 8(2):739-743.
[10] Liu X, Song H, Miao G Q, et al. Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method [J]. J. Alloys Compd., 2011, 509(24):6751-6755.
[11] Liu X, Song H, Miao G Q, et al. Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD [J]. Solid State Commun., 2011, 151(12):904-907.
[12] Miao G Q, Zhang T M, Zhang Z W, et al. Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD [J]. Cryst. Eng. Comm., 2013, 15:8461-8462.
[13] Caniou J. Passive Infrared Detection: Theory and Application [M]. Boston:Kluwer Academic Publishers, 1999:78-81.
[14] Piotrowski J. Film-type infrared photoconductors [J]. Proceedings of IRE, 1959, 47:1471-1475.
[15] Forrest S R. Voltage tunable integrated infrared imager [J]. IEEE Quant. Electron., 1981, 17(2):217-221.
[16] Caniou J. Passive Infrared Detection: Theory and Application [M]. Boston:Kluwer Academic Publishers, 1999:620.
[17] Forrest S R, Leheny R F, Nahory R F, et al. In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunneling [J]. Appl. Phys. Lett., 1980, 37(3):322-325.
[18] Forrest S R, DiDomenico M, Smith R G, et al. Evidence for tunneling in reverse-biased Ⅲ-Ⅴ photodetector diodes [J]. Appl. Phys. Lett., 1980, 36(7):580-582.
赵旭, 缪国庆, 张志伟, 曾玉刚. 新型复合盖层延伸波长InGaAs红外探测器结构优化设计[J]. 发光学报, 2015, 36(1): 75. ZHAO Xu, MIAO Guo-qing, ZHANG Zhi-wei, ZENG Yu-gang. Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector[J]. Chinese Journal of Luminescence, 2015, 36(1): 75.