980 nm半导体激光照射对种植体表面结构和温度影响的实验研究

目的: 980 nm半导体激光可用于种植体周围软组织处理和种植体周围炎治疗, 但其对种植体的作用尚未完全被了解。本文研究980 nm半导体激光照射对种植体表面结构和温度变化的影响, 以期为临床使用参数设置和操作方法提供依据。方法: 980 nm半导体激光照射纯钛圆盘试件, 扫描电镜观察钛盘表面结构变化, 热电偶检测钛盘温度变化范围和到达骨组织损伤温度升高阈值(10 ℃)的照射时长。结果: 实验全部参数设置下980 nm半导体激光照射, 钛盘表面结构均无明显改变。脉冲模式输出功率1 W, 移动照射20 s钛盘温度上升19.8 ℃; 经过10.2 s钛盘温度升高可达10 ℃。连续输出模式或增加输出功率, 钛盘温度显著上升, 并可在数秒内超过10 ℃。结论: 980 nm半导体激光照射对种植体表面结构无损伤, 但存在种植体温度升高造成周围组织热损伤的风险。

Abstract

Objective: 980 nm diode laser had been used in soft tissue management around implant and peri-implantitis treatment. However, the effect of 980 nm diode laser irradiation on the implant is only partially known. The aim of this study was to investigate the effect of irradiation with 980 nm diode laser on the surface microstructure and temperature change of dental implants in vitro, in order to provide the reference for clinical applications. Methods: Titanium discs were irradiated with 980 nm diode laser with a range of power setting. The surface microstructure was observed by scanning electron microscope, and the temperature elevation was measured by thermocouple. Temperature increment and time to reach a 10 ℃ threshold was recorded. Results: No surface alternation was detected after 980 nm diode laser irradiation with all power setting. Temperature elevation of titanium discs after 20 seconds irradiation with 1 W, pulse mode, is 19.8 ℃, and it took 10.2 seconds to exceed a critical threshold of 10 ℃. Temperature rose significantly and rapidly when titanium discs were irradiated with higher power setting or continue wave mode. Conclusion: 980 nm diode laser irradiation does not change the surface structure of dental implant, but may produce a risk of thermal damage of surrounding tissue.

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李倩, 孔亚群, 董晓曦, 马芮, 李迎新, 赵继志. 980 nm半导体激光照射对种植体表面结构和温度影响的实验研究[J]. 激光生物学报, 2017, 26(3): 244. LI Qian, KONG Yaqun, DONG Xiaoxi, MA Rui, LI Yingxin, ZHAO Jizhi. Effects of 980 nm Diode Laser Irradiation on the Surface Characteristics and Temperature Change of Titanium Discs[J]. Acta Laser Biology Sinica, 2017, 26(3): 244.

980 nm半导体激光照射对种植体表面结构和温度影响的实验研究

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