光电子快报（英文版）, 2016, 12 (4): 285, Published Online: Oct. 12, 2017
Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition
Basic Information
| DOI: | 10.1007/s11801-016-6058-6 |
| 中图分类号: | -- |
| 栏目: | |
| 项目基金: | This work has been supported by the National High Technology Research and Development Program of China (No.2015AA042603), and the Fundamental Research Funds for the Central Universities of China (No.106112014CDJZR160001). |
| 收稿日期: | Mar. 15, 2016 |
| 修改稿日期: | -- |
| 网络出版日期: | Oct. 12, 2017 |
| 通讯作者: | LI Dong-ling (lidongling@cqu.edu.cn) |
| 备注: | -- |
LI Dong-ling, FENG Xiao-fei, WEN Zhi-yu, SHANG Zheng-guo, SHE Yin. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition[J]. 光电子快报（英文版）, 2016, 12(4): 285.
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