Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

LI Dong-ling; FENG Xiao-fei; WEN Zhi-yu; SHANG Zheng-guo; SHE Yin

doi:doi:10.1007/s11801-016-6058-6

光电子快报（英文版）, 2016, 12 (4): 285, Published Online: Oct. 12, 2017

Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

LI Dong-ling ^1,2,*FENG Xiao-fei ³WEN Zhi-yu ^1,2SHANG Zheng-guo ^1,2SHE Yin ^1,2

Author Affiliations

¹ National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400030, China

² Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China

³ No.24 Reaearch Institute of China Electronics Technology Group Corporation, Chongqing 400060, China

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LI Dong-ling, FENG Xiao-fei, WEN Zhi-yu, SHANG Zheng-guo, SHE Yin. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition[J]. 光电子快报（英文版）, 2016, 12(4): 285.

Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

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