GaN{11-22}半极性面上生长InGaN/GaN多量子阱的研究 
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杨国锋, 朱华新, 郭颖, 李果华, 高淑梅. GaN{11-22}半极性面上生长InGaN/GaN多量子阱的研究[J]. 激光与光电子学进展, 2014, 51(2): 022302.
Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Study on the Growth of InGaN/GaN Multiple Quantum Wells on GaN {11-22} Semipolar Plane[J]. Laser & Optoelectronics Progress, 2014, 51(2): 022302.
[1] S Nakamura, T Mukai, M Senoh, et al.. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes [J]. Appl Phys Lett, 1994, 64(13): 1687-1689.
[2] A K Viswanath, J I Lee, S T Kim, et al.. Growth of good quality InGaN multiple quantum wells by MOCVD [J]. J Cryst Growth, 2004, 260(3-4): 322-326.
[3] K S Ranaiah, Y K Su, S J Chang, et al.. Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition [J]. Appl Phys Lett, 2004, 85(3): 401-403.
[4] 梁 亮，牛萍娟，于莉媛. 电子束辐照对GaN基蓝光LED性能的影响[J].激光与光电子学进展, 2010, 47(10): 102301.
[5] 陈莹亮, 吕毅军, 高玉琳, 等. 交流发光二极管光电特性的研究[J]. 光学学报, 2010, 30(12): 3586-3591.
[6] 陈 健, 王庆康, 李海华. 光子晶体结构参数的随机扰动对光子晶体LED出光效率的研究[J]. 光学学报, 2010, 30(1): 233-236.
[7] 刘军林, 邱 冲, 江风益. Si衬底GaN基蓝光LED钝化增透膜研究[J]. 光学学报, 2010, 30(10): 2978-2982.
[8] M D McCluskey, L T Romano, B S Krusor, et al.. Phase separation in InGaN/GaN multiple quantum wells [J]. Appl Phys Lett, 1998, 72(14): 1730-1732.
[9] H Miyake, A Motogaito, K Hiramatsu, et al.. Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy [J]. Jpn J Appl Phys, 1999, 38(9): L1000-L1002.
[10] A E Romanov, T J Baker, S Nakamura, et al.. Strain-induced polarization in wurtzite III-nitride semipolar layers [J]. J Appl Phys, 2006, 100(2): 023522.
[11] S E Brinkley, Y D Lin, A Chakraborty, et al.. Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes [J]. Appl Phys Lett, 2011, 98(1): 011110.
[12] X Zhang, P D Dapkus, D H Rich. Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation [J]. Appl Phys Lett, 2000, 77(10): 1496-1498.
[13] T S Zheleva, O H Nam, W M Ashmawi, et al.. Lateral epitaxy and dislocation density reduction in selectively grown GaN structures [J]. J Cryst Growth, 2001, 222(4): 706-718.
[14] P de Mierry, N Kriouche, M Nemoz, et al.. Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching [J]. Appl Phys Lett, 2010, 96(23): 231918.
[15] T Tsuchiya, J Shimizu, M Shirai, et al.. InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy [J]. J Cryst Growth, 2005, 276(3-4): 439-445.
[16] P Waltereit, O Brandt, A Trampert, et al.. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes [J]. Nature, 2000, 406(6798): 865-868.
[17] K Hiramatsu, K Nishiyama, M Onishi, et al.. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) [J]. J Cryst Growth, 2000, 221(1-4): 316-326.
[18] K Hiruma, T Haga, M Miyazaki. Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition [J]. J Cryst Growth, 1990, 102(4): 717-724.
[19] K Yamaguchi, M Ogasawara, K Okamoto. Surface-diffusion model in selective metalorganic chemical vapor deposition [J]. J Appl Phys, 1992, 72(12): 5919-5925.
[20] Bernardini, V Fiorentini, D Vanderbilt. Spontaneous polarization and piezoelectric constants of III-V nitrides [J]. Phys Rev B, 1997, 56(16): R10024-R10027.
杨国锋, 朱华新, 郭颖, 李果华, 高淑梅. GaN{11-22}半极性面上生长InGaN/GaN多量子阱的研究[J]. 激光与光电子学进展, 2014, 51(2): 022302. Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Study on the Growth of InGaN/GaN Multiple Quantum Wells on GaN {11-22} Semipolar Plane[J]. Laser & Optoelectronics Progress, 2014, 51(2): 022302.
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