利用全固态分子束外延方法在Ge(100)衬底上异质外延GaAs薄膜及相关特性表征
何巍, 陆书龙, 杨辉. 利用全固态分子束外延方法在Ge(100)衬底上异质外延GaAs薄膜及相关特性表征[J]. 红外与毫米波学报, 2016, 35(2): 206.
HE Wei, LU Shu-Long, YANG Hui. Initial heteroepitaxial growth and characterization of GaAs on Ge(100) by all-solid-source molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2016, 35(2): 206.
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何巍, 陆书龙, 杨辉. 利用全固态分子束外延方法在Ge(100)衬底上异质外延GaAs薄膜及相关特性表征[J]. 红外与毫米波学报, 2016, 35(2): 206. HE Wei, LU Shu-Long, YANG Hui. Initial heteroepitaxial growth and characterization of GaAs on Ge(100) by all-solid-source molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2016, 35(2): 206.
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