红外与毫米波学报, 2016, 35 (2): 129, 网络出版: 2016-05-11  

中波碲镉汞光伏探测器的实时gamma 辐照效应

Dynamic gamma irradiation effects on mid-wavelength HgCdTe photovoltaic detectors
作者单位
1 中国科学院上海技术物理研究所 中科院红外成像材料与器件重点实验室,上海200083
2 中国科学院大学,北京100039
摘要
对中波碲镉汞光伏探测器进行了实时gamma 辐照效应研究.通过在辐照过程中对器件的电流—电压特性曲线进行测试,得到了器件电学性能随着gamma辐照剂量的变化.研究发现器件在辐照过程中表现出两种典型的辐照效应: 电离效应和位移效应.电离效应可以通过辐照过程中类似光电流的产生来表现出来,而位移效应则通过辐照过程中器件串联电阻的增加来体现.两种效应都表现为总剂量效应.分析认为,由于位移效应引入的辐照损伤随着辐照剂量的增加越来越多,辐照电离效应产生的自由载流子产额随之逐渐降低,说明随着辐照剂量增加,电离效应逐渐降低,而位移效应则逐渐增强,导致器件性能衰退.
Abstract
The dynamic current-voltage (I-V) characteristics of mid-wavelength HgCdTe photovoltaic detectors under steady-state gamma irradiation have been measured as a function of gamma dosage. Two obvious effects were observed due to gamma radiation. One is the ionization effect demonstrated by the generation of the photocurrent in the diodes. The other is the displacement damage effect reflected by the increased resistivity in the neutral region. Both effects showed dosage dependence. Qualitative analysis showed that the photo electron yield became small with increasing gamma dosage, which meant the radiation-induced defects played a significant role in large dosage range.
参考文献

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乔辉, 李淘, 龚海梅, 李向阳. 中波碲镉汞光伏探测器的实时gamma 辐照效应[J]. 红外与毫米波学报, 2016, 35(2): 129. QIAO Hui, LI Tao, GONG Hai-Mei, LI Xiang-Yang. Dynamic gamma irradiation effects on mid-wavelength HgCdTe photovoltaic detectors[J]. Journal of Infrared and Millimeter Waves, 2016, 35(2): 129.

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