光学学报, 2018, 38 (9): 0927001, 网络出版: 2019-05-09
有限厚度拓扑绝缘体平板附近原子的自发辐射特性 
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Spontaneous Emission Characteristics of Atoms near Topological Insulator Slab with Finite Thickness
图 & 表
图 2. TI平板附近二能级原子的自发辐射率随板厚的变化曲线。(a)平行偶极子; (b)垂直偶极子
Fig. 2. Spontaneous emission rate of two-level atoms near TI slab versus slab thickness. (a) Parallel dipole; (b) perpendicular dipole
图 3. TI板附近二能级原子的自发辐射率随原子位置的变化曲线。(a)平行偶极子; (b)垂直偶极子
Fig. 3. Spontaneous emission rate of two-level atoms near TI slab versus atomic position. (a) Parallel dipole; (b) perpendicular dipole
图 4. 考虑耗散后,板界面附近二能级原子的自发辐射率随板厚的变化曲线。(a)平行偶极子; (b)垂直偶极子
Fig. 4. Spontaneous emission rate of two-level atoms near TI slab versus slab thickness when dissipation is included. (a) Parallel dipole; (b) perpendicular dipole
图 5. TI板界面附近二能级原子的自发辐射率随原子位置的变化曲线。(a)平行偶极子; (b)垂直偶极子
Fig. 5. Spontaneous emission rate of two-level atoms near TI slab interface versus atomic position. (a) Parallel dipole; (b) perpendicular dipole
图 6. TI板腔内的二能级原子自发辐射率随原子位置的变化曲线(插图: 对应的有耗散情形 )。(a)平行偶极子; (b)垂直偶极子
Fig. 6. Spontaneous emission rate of two-level atoms inside TI slab cavity versus atomic position (inset: corresponding case when dissipation is included). (a) Parallel dipole; (b) perpendicular dipole
图 7. 具有耗散的TI板腔内的二能级原子自发辐射率随腔长的变化曲线(插图: 对应的无耗散情形 )。(a)平行偶极子; (b)垂直偶极子
Fig. 7. Spontaneous emission rate of two-level atoms inside TI slab cavity versus cavity length when dissipation is included (inset: corresponding case when dissipation is ignored). (a) Parallel dipole; (b) perpendicular dipole
曾然, 侯金鑫, 王驰, 李齐良, 毕美华, 杨国伟, 羊亚平. 有限厚度拓扑绝缘体平板附近原子的自发辐射特性[J]. 光学学报, 2018, 38(9): 0927001. Ran Zeng, Jinxin Hou, Chi Wang, Qiliang Li, Meihua Bi, Guowei Yang, Yaping Yang. Spontaneous Emission Characteristics of Atoms near Topological Insulator Slab with Finite Thickness[J]. Acta Optica Sinica, 2018, 38(9): 0927001.
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