光电工程, 2006, 33 (3): 101, 网络出版: 2007-11-14  

激光剥离Al2O3/GaN中GaN材料温度场的模拟

Temperature field simulation of GaN material during Al2O3/GaN laser lift-off
作者单位
北京工业大学,电子信息与控制工程学院,北京市光电子技术实验室,北京,100022
引用该论文

王婷, 郭霞, 刘斌, 沈光地. 激光剥离Al2O3/GaN中GaN材料温度场的模拟[J]. 光电工程, 2006, 33(3): 101.

王婷, 郭霞, 刘斌, 沈光地. Temperature field simulation of GaN material during Al2O3/GaN laser lift-off[J]. Opto-Electronic Engineering, 2006, 33(3): 101.

参考文献

[1] Masayoshi KOIKE,Naoki SHIBATA,Hisaki KATO,et al.Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications[J].IEEE Journal on Selected Topics in Quantum Electronics,2002,8(2):271-277.

[2] NAKAMURA S,SENOH M,NAGAHAMA S,et al.Violet InGaN/GaN/AlGaN based laser diodes with an output power of 420mW[J].Jpn.J.Appl.Phys.Part 2-Lett,1998,37(6A):1627-1629.

[3] T.EGAWA,H.OHMURA,H.ISHIKAWA,et al.Demonstration of an InGaN-based light emitting diode on an AlN/Sapphire template by metalorganic chemical vapor deposition[J].Appl.Phys.Lett,2002,81(2):292-294.

[4] Chia-Ming LEE,Chang-Ceng CHUO,I-Ling CHEN,et al.High-brightness inverted InGaN -GaN multi-quantum-well light-emitting diodes without a transparent conductive layer[J].IEEE Electron Device Letters,2003,24(3):156-158.

[5] W.S.WONG,T.SANDS,N.W.CHEUNG,et al.InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off[J].Appl.Phys.Lett,2000,77(18):2822-2824.

[6] Martin Von ALLMEN,Andreas BLASTTER.Laser-beam interactions with materials[M].Berlin:Springer-Verlag,1995.

[7] 李俊昌.激光的衍射及热作用计算[M].北京:科学出版社,2002.LI Jun-chang.The diffraction and thermal effect calculation of laser[M].Beijing:Science Press,2002.

王婷, 郭霞, 刘斌, 沈光地. 激光剥离Al2O3/GaN中GaN材料温度场的模拟[J]. 光电工程, 2006, 33(3): 101. 王婷, 郭霞, 刘斌, 沈光地. Temperature field simulation of GaN material during Al2O3/GaN laser lift-off[J]. Opto-Electronic Engineering, 2006, 33(3): 101.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!