光子学报
2023, 52(10): 1052403
1 长春理工大学光电工程学院,吉林 长春 130022
2 长春理工大学中山研究院,广东 中山 528436
3 光驰科技(上海)有限公司,上海 200444
4 中国科学院长春光学精密机械与物理研究所,吉林 长春 130033
5 云南北方光学科技有限公司,云南 昆明 650216
为了满足5G光通信对细波分复用(LWDM)窄带滤光膜的要求,笔者采用电子束与离子辅助沉积技术,在K9基底上镀制了高质量光通信滤光膜。提出了一种高精度调试膜厚均匀性与光谱一致性的方法,该方法通过对特殊膜系镀膜结果进行反演分析,能快速分析出Ta2O5和SiO2两种材料光学厚度的误差,根据分析结果调节修正板,可以有效解决光学厚度匹配的问题,改善窄带滤光膜光谱。在镀制过程中采用光学直接监控法监控膜厚,对基板的实时光量值曲线进行拟合,根据拟合结果监控膜层厚度,同时采用晶控平均厚度法对耦合层与非规整膜层进行监控,提高了监控精度。最终制备的滤光膜在-0.2 dB处的带宽为4.1 nm,通带内最大插入损耗为0.14 dB,通带波纹为0.04 dB,-27 dB处带宽为6.0 nm,满足细波分复用窄带滤光膜的技术要求。
光通信 细波分复用 光学直接监控法 晶控平均厚度法 通带波纹 中国激光
2023, 50(19): 1903101
1 长春理工大学光电工程学院,吉林 长春 130022
2 长春理工大学中山研究院,广东 中山 528436
3 北京空间机电研究所,北京 100094
在微光夜视与红外成像融合的光学系统中,光通过55°放置的分光镜分成两束光,其中反射光被微光探测器接收进行微光夜视成像,透射光被红外探测器接收进行红外成像,通过图像融合技术来提高系统的成像分辨率。针对分光镜的参数要求,笔者选用Ge、ZnS和YbF3作为沉积材料,采用离子源辅助沉积技术在多光谱ZnS基底上制备了0.6~0.9 μm波段高反、3.7~4.8 μm波段高透的分光膜。通过对膜系结构的优化以及沉积工艺参数的调整,解决了膜层牢固度和面形精度等问题,实现了0.6~0.9 μm波段反射率为90.77%、3.7~4.8 μm波段透射率为91.15%的分光指标。附着力测试、摩擦力测试、高低温测试、恒温恒湿测试结果显示所制备的双面膜可以满足使用要求,但该膜的短波反射率和长波透过率仍有一定的提升空间。
光学器件 分光镜 微光夜视 中波红外成像 面形精度 中国激光
2023, 50(14): 1403101
Author Affiliations
Abstract
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing 100193, China
We demonstrated an electrically pumped InP-based microcavity laser operating in continuous-wave mode. The active region is designed with antimony surfactants to enhance the gain at 2 μm, and a selective electrical isolation scheme is used to secure continuous-wave operation for the microcavity laser at room temperature. The lasers were fabricated as a notched elliptical resonator, resulting in a highly unidirectional far-field profile with an in-plane beam divergence of less than 2°. Single-mode emission was obtained over the entire dynamic range, and the laser frequencies were tuned linearly with the pumping current. Overall, these directional lasers pave the way for portable and highly integrated on-chip sensing applications.
whispering-gallery mode continuous-wave operation electrical isolation directional emission Chinese Optics Letters
2023, 21(4): 041405
Author Affiliations
Abstract
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
We report on the design and fabrication of a dual-wavelength switchable quantum cascade laser (QCL) by optimizing the design of a homogeneous active region and combining superposed distributed feedback gratings. Coaxial, single-mode emissions at two different wavelengths were achieved only through adjusting the bias voltage. Room temperature continuous-wave operation with output powers of above 30 mW and 75 mW was realized for single-mode emission at 7.61 µm and 7.06 µm, respectively. The simplified fabrication process and easy wavelength control of our designed dual-wavelength QCL make it very attractive for developing miniature multi-species gas sensing systems.
quantum cascade laser dual-wavelength mid-infrared Chinese Optics Letters
2023, 21(1): 011408
1 中国科学院半导体研究所半导体材料科学重点实验室,北京 100083
2 中国科学院大学材料科学与光电技术学院,北京 100049
基于金属有机物化学气相沉积(MOCVD)技术实现了室温连续(CW)输出功率达到瓦级的中波红外量子级联激光器(QCL)。通过MOCVD生长条件优化,实现了高界面质量双声子共振结构材料生长,制备出室温CW功率最高为1.21 W的4.6 μm QCL。具体研究了基于生长的30和40级有源区材料所制备器件的性能,探究了不同级数对器件性能的影响。相比于30级有源区器件,40级有源区器件单位面积等效输出功率没有明显提升,但器件性能随温度的升高迅速下降,这归因于更加显著的热积累效应和外延材料变厚导致的质量恶化。因此,在通过增加有源区级数提升器件功率时,需要充分考虑有源级数、热积累和材料生长质量等因素之间的平衡。MOCVD是半导体材料产业界普遍采用的技术,本研究工作对于提升QCL材料制备效率、推进QCL技术产业化应用具有重要意义。
激光器 中红外 量子级联激光器 金属有机物化学气相沉积 高功率 连续输出 光学学报
2022, 42(22): 2214002
Author Affiliations
Abstract
1 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
We demonstrate GaSb-based interband cascade lasers (ICLs) emitting around 3.65 µm, which exhibit a room-temperature continuous-wave (CW) output power above 100 mW. Cavity-length analysis showed that the laser structure has a low internal loss of while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25°C, the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.
interband cascade lasers quantum well mid-infrared semiconductor lasers Chinese Optics Letters
2022, 20(2): 022501
光子学报
2021, 50(10): 1004004