A 60-mW solid-state deep ultraviolet (DUV) laser at 193 nm with narrow linewidth is obtained with two stages of sum frequency generation in LBO crystals. The pump lasers, at 258 and 1553 nm, are derived from a homemade Yb-hybrid laser employing fourth-harmonic generation and Er-doped fiber laser, respectively. The Yb-hybrid laser, finally, is power scaling by a 2 mm × 2 mm × 30 mm Yb:YAG bulk crystal. Accompanied by the generated 220-mW DUV laser at 221 nm, the 193-nm laser delivers an average power of 60 mW with a pulse duration of 4.6 ns, a repetition rate of 6 kHz, and a linewidth of ∼640 MHz. To the best of our knowledge, this is the highest power of 193- and 221-nm laser generated by an LBO crystal ever reported as well as the narrowest linewidth of 193-nm laser by it. Remarkably, the conversion efficiency reaches 27% for 221 to 193 nm and 3% for 258 to 193 nm, which are the highest efficiency values reported to date. We demonstrate the huge potential of LBO crystals for producing hundreds of milliwatt or even watt level 193-nm laser, which also paves a brand-new way to generate other DUV laser wavelengths.

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated. Then, the external quantum efficiency (EQE) and light extraction efficiency (LEE) are systematically investigated by comparing size and edge effects. Here, it is revealed that the peak optical output power increases by 81.83% with the size shrinking from 50.0 to 25.0 μm. Thereinto, the LEE increases by 26.21% and the LEE enhancement mainly comes from the sidewall light extraction. Most notably, transverse-magnetic (TM) mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design. However, when it turns to 12.5 μm sized micro-LEDs, the output power is lower than 25.0 μm sized ones. The underlying mechanism is that even though protected by SiO₂ passivation, the edge effect which leads to current leakage and Shockley-Read-Hall (SRH) recombination deteriorates rapidly with the size further shrinking. Moreover, the ratio of the p-contact area to mesa area is much lower, which deteriorates the p-type current spreading at the mesa edge. These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm, which will pave the way for wide applications of deep ultraviolet (DUV) micro-LEDs.

利用磁控溅射和金属有机化学气相沉积方法在c面蓝宝石衬底上生长了深紫外Al_0.38Ga_0.62N/Al_0.55Ga_0.45N多量子阱结构，并对其荧光（PL）谱进行了测量。其PL谱的激发密度依赖性测量结果表明，该量子阱的辐射过程包含了局域载流子的散射、极化场的屏蔽和局域态的填充效应；其PL谱的温度依赖性测量结果则表明，该量子阱的辐射过程包含了局域载流子的弛豫、局域载流子的热激发和自由载流子的常规热化效应。这个现象（即多种辐射复合过程的存在）在低温和弱激发测试条件下尤为显著，并且表现出该量子阱结构具有显著的局域深度非均一性和载流子的局域效果，是浅局域载流子的散射效应和深局域态的载流子填充效应共同作用所致。在较低的温度范围内，随着温度升高，该量子阱的辐射过程是由浅局域载流子的弛豫效应和深局域载流子的热激发效应共同作用的结果。这些行为被归因于阱宽起伏所诱发的局域深度的非均一性和载流子的局域效果。