Author Affiliations
Abstract
1 Xi’an Institute of Optics and Precision Mechanics of Chinese Academy of Sciences, Center for Attosecond Science and Technology, State Key Laboratory of Transient Optics and Photonics, Xi’an, China
2 University of Chinese Academy of Sciences, Beijing, China
3 Shanxi University, Collaborative Innovation Center of Extreme Optics, Taiyuan, China
Moiré superlattices, a twisted functional structure crossing the periodic and nonperiodic potentials, have recently attracted great interest in multidisciplinary fields, including optics and ultracold atoms, because of their unique band structures, physical properties, and potential implications. Driven by recent experiments on quantum phenomena of bosonic gases, the atomic Bose–Einstein condensates in moiré optical lattices, by which other quantum gases such as ultracold fermionic atoms are trapped, could be readily achieved in ultracold atom laboratories, whereas the associated nonlinear localization mechanism remains unexploited. Here, we report the nonlinear localization theory of ultracold atomic Fermi gases in two-dimensional moiré optical lattices. The linear Bloch-wave spectrum of such a twisted structure exhibits rich nontrivial flat bands, which are separated by different finite bandgaps wherein the existence, properties, and dynamics of localized superfluid Fermi gas structures of two types, gap solitons and gap vortices (topological modes) with vortex charge S = 1, are studied numerically. Our results demonstrate the wide stability regions and robustness of these localized structures, opening up a new avenue for studying soliton physics and moiré physics in ultracold atoms beyond bosonic gases.
moiré optical lattices gap solitons ultracold Fermi gases density-functional equation 
Advanced Photonics Nexus
2024, 3(3): 036006
Yong Sun 1,2,*Wei Zhang 1,2Shuang Han 1,2Ran An 1,2[ ... ]Jing-Lin Xiao 1,2
Author Affiliations
Abstract
1 Institute of Condensed Matter Physics, Inner Mongolia Minzu University, Tongliao 028043, China
2 College of Physics and Electronic Information, Inner Mongolia Minzu University, Tongliao 028043, China
Excitons have significant impacts on the properties of semiconductors. They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping. Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in AlxGa1?xAs semiconductor spherical quantum dots. The AlxGa1?xAs is considered to be a direct semiconductor at Al concentration below 0.45, and an indirect one at the concentration above 0.45. With regards to the former, the ground state binding energy increases and decreases with Al concentration and eigenfrequency, respectively; however, while the ground state energy increases with Al concentration, it is marginally influenced by eigenfrequency. On the other hand, considering the latter, while the ground state binding energy increases with Al concentration, it decreases with eigenfrequency; nevertheless, the ground state energy increases both with Al concentration and eigenfrequency. Hence, for the better practical performance of the semiconductors, the properties of the excitons are suggested to vary by adjusting Al concentration and eigenfrequency
exciton effects aluminum gallium arsenide crystal direct band gap semiconductor indirect band gap semiconductor 
Journal of Semiconductors
2024, 45(3): 032701
作者单位
摘要
国防科技大学 前沿交叉学科学院,长沙 410073
随着高功率微波源向高功率、高频率和长脉冲方向不断发展,同轴相对论速调管放大器(RKA)成为近年来研究热点之一,然而其发展一直受限于自激振荡等问题存在,为此,设计一种高Q值单间隙同轴谐振腔,以抑制同轴RKA中TEM模式泄露引起的自激振荡。通过对单间隙同轴谐振腔TM01模式与TEM模式转化进行理论分析与仿真模拟,发现同轴谐振腔上下槽深差值与轴向错位值对其Q值变化影响很大,当上下槽深差值与轴向错位值分别为0.3 mm和0 mm时,同轴谐振腔的Q值为极大值(18 764),意味着此时谐振腔中两种模式转化最小,多组谐振腔级联后自激振荡风险大大降低。将三组级联的高Q值单间隙同轴谐振腔应用于紧凑型同轴RKA,粒子模拟和实验结果表明,器件的输出微波功率稳定,频谱纯净,无自激振荡等问题存在。
同轴相对论速调管放大器 自激振荡 Q 单间隙同轴谐振腔 coaxial relativistic klystron amplifier self-oscillation high Q-factor single-gap coaxial resonator 
强激光与粒子束
2024, 36(3): 033012
作者单位
摘要
中国科学院 广州能源研究所, 广东 广州 510640
采用氢氟酸HF原位注入法制备了InP/GaP/ZnS量子点。通过紫外/可见/近红外光谱、光致发光光谱、透射电镜、球差校正透射电镜、X射线衍射、X射线光电子能谱等测试手段分析了HF对InP量子点的发光性能影响。实验结果表明,HF刻蚀减少了量子点表面氧化缺陷状态,有效控制了InP核表面的氧化,并且原子配体形式的F-钝化了量子点表面的悬挂键,显著提升了量子点的光学性能。HF处理的InP/GaP/ZnS量子点具有最佳的发光性能,PLQY高达96%。此外,用HF处理InP/GaP/ZnS量子点制备的发光二极管,其发光的电流效率为6.63 cd/A,最佳外量子效率EQE为3.83%。
HF InP/GaP/ZnS量子点 光学性能 发光二极管 HF InP/GaP/ZnS quantum dot optical performance light emitting diode 
发光学报
2024, 45(1): 69
白弘宙 1,2臧善志 1,2谭诚 1,2王凯 1[ ... ]徐刚毅 1,3,*
作者单位
摘要
1 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,上海 200083
2 中国科学院大学,北京 100049
3 中国科学院大学杭州高等研究院 物理与光电工程学院,浙江 杭州 310024
常规的分布式布拉格反射(DBR)半导体激光器中,增益区域所对应的自由谱间距应大于DBR高反射率带宽的1/2,以获得稳定的单模激射。该条件限制了DBR激光器的阈值和功率特性。文章首次提出并实现了基于DBR选模的太赫兹量子级联激光器(THz-QCL),并突破了上述限制。作者所实现的THz-QCL采用脊波导结构,利用解理腔面和DBR反射镜构成谐振腔,利用有源区增益谱较窄的特点,通过调整DBR反射率谱使增益谱与DBR高反射带在频域中部分重叠,从而获得了单模激射的THz-QCL。该方案使得DBR高反射带显著宽于自由谱间距,即显著提高了激光器中增益区域的长度,从而降低阈值并提高功率特性。实验上,作者研制出增益区域长达3.6 mm的DBR激光器,单模激射的频率为2.7 THz,边模抑制比达到25 dB,该激光器的阈值和温度特性与相同材料制备的法布里-泊罗腔多模激光器相当。文章中的工作为实现高性能单模太赫兹量子级联激光器提供了新的研究思路。
半导体激光器 量子级联 太赫兹 分布式布拉格反射镜 单模 光子禁带 semiconductor lasers quantum cascade terahertz distributed Bragg reflector single mode photonic band gap 
红外与毫米波学报
2023, 42(6): 795
Author Affiliations
Abstract
1 University of Technology and Applied Sciences, P.O. Box 14, Ibri 516, Oman
2 Department of Mathematics, Sultan Qaboos University, P.O. Box 36, Al-Khod, Muscat 123, Oman
3 Department of Mathematics and Physics, Grambling State University, Grambling, LA-71245, USA
4 Mathematical Modeling and Applied Computation (MMAC) Research Group, Center of Modern Mathematical Sciences and their Applications (CMMSA), Department of Mathematics, King Abdulaziz University, Jeddah 21589, Saudi Arabia
5 Department of Applied Sciences, Cross-Border Faculty of Humanities, Economics and Engineering, Dunarea de Jos University of Galati, 111 Domneasca Street, 800201 Galati, Romania
6 Department of Mathematics and Applied Mathematics, Sefako Makgatho Health Sciences University, Medunsa-0204, Pretoria, South Africa
The present study is devoted to investigate the chirped gap solitons with Kudryashov’s law of self-phase modulation having dispersive reflectivity. Thus, the mathematical model consists of coupled nonlinear Schrödinger equation (NLSE) that describes pulse propagation in a medium of fiber Bragg gratings (BGs). To reach an integrable form for this intricate model, the phase-matching condition is applied to derive equivalent equations that are handled analytically. By means of auxiliary equation method which possesses Jacobi elliptic function (JEF) solutions, various forms of soliton solutions are extracted when the modulus of JEF approaches 1. The generated chirped gap solitons have different types of structures such as bright, dark, singular, W-shaped, kink, anti-kink and Kink-dark solitons. Further to this, two soliton waves namely chirped bright quasi-soliton and chirped dark quasi-soliton are also created. The dynamic behaviors of chirped gap solitons are illustrated in addition to their corresponding chirp. It is noticed that self-phase modulation and dispersive reflectivity have remarkable influences on the pulse propagation. These detailed results may enhance the engineering applications related to the field of fiber BGs.
Chirped gap solitons Bragg gratings Kudryashov’s law 
Journal of the European Optical Society-Rapid Publications
2023, 19(2): 2023038
作者单位
摘要
武汉理工大学 理学院 物理系, 武汉 430070
为了设计制造新型的位相延迟器, 利用1维光子晶体的特性, 在折射率为1.52的玻璃上, 镀制了由硫化锌(ZnS)与冰晶石(Na3AlF6)构成的多周期二次元一维光子晶体,进行了数值模拟计算及理论分析。结果表明, 在带隙范围内, 1维光子晶体的等效折射率是虚等效折射率;在斜入射时, 带隙内的p光和s光的反射光各自位相增加, 出现位相延迟, 其偏振态发生改变, 由线偏振光变为椭圆(圆)偏振光;在发生全反射时, 光疏媒质的等效折射率是虚等效折射率;反射光出现位相增加, 产生位相延迟, 其偏振态发生改变, 由线偏振光变为椭圆(圆)偏振光。该延迟器可以改变光的传播方向, 改变偏振态的位相, 克服了薄膜λ/4波片的缺陷。
物理光学 位相延迟器 全反射 虚折射率 光子晶体 带隙 physical optics phase retardation total reflection imaginary refractive index photonic crystal band gap 
激光技术
2023, 47(5): 686
作者单位
摘要
闽南师范大学 物理与电信工程学院,福建 漳州 363000
在p型GaP表面制作Ag电极,并利用退火环境令金属和半导体的接触界面产生良好的欧姆接触。通过扫描电子显微镜(SEM)、俄歇电子能谱(AES)以及X射线光电子能谱(XPS)的表征分析与对比,研究了不同退火环境对欧姆接触表面特性的影响。结果表明:退火时间过短,获得能量自由移动的原子移动面积小,不利于提高样品表面致密性;退火温度过高,欧姆接触表面的晶粒又容易发生球聚现象,造成样品表面的粗糙程度加剧。另外,在退火过程中,发生的相互扩散、形成化合物和合金相以及氧化反应也会对欧姆接触表面特性产生影响。其中,氧化反应较其他反应更为剧烈,对比接触电阻率的影响更大。因此,适宜的退火环境和有效控制氧化反应是增强欧姆接触性能的关键。
p型GaP 欧姆接触 表面特性 p-GaP Ohmic contact surface characteristic 
半导体光电
2023, 44(3): 417
作者单位
摘要
柳州工学院机械工程学院, 广西 柳州 545026
为阐明异种钢激光填丝焊接工艺参数对焊缝成形的影响, 以不等厚板2 mm 45钢和6 mm 316L不锈钢为试验材料, 采用激光填丝焊接方法进行焊接, 研究不同对接间隙下的焊缝成形以及焊接接头的力学性能。结果表明, 随着对接间隙的增加, 余高逐渐减小, 焊缝形貌从钉子形向H形过渡, 随着对接间隙变大, 焊缝形成缺陷。焊缝中心硬度随着对接间隙的增加而减小, 焊接接头硬度最高处位于45钢热影响区。焊接接头的抗拉强度随着对接间隙的增加先增大后减小。在对接间隙为0.6 mm时, 表面形貌良好且抗拉强度最高, 焊接试验断裂位置在2 mm 45钢一侧。
激光填丝焊 对接间隙 力学性能 微观组织 laser wire filler welding butt gap mechanical property microstructure 
应用激光
2023, 43(4): 55
刘文通 1,2,3李丽娟 1,2,3,*任姣姣 1,2,3顾健 1,2,3[ ... ]陈奇 3
作者单位
摘要
1 长春理工大学光电测控与光信息传输技术教育部重点实验室,吉林 长春 130022
2 长春理工大学光电工程学院,吉林 长春 130022
3 长春理工大学中山研究院,广东 中山 528400
电力绝缘子具有机械强度高、表面不易发生裂缝、老化速度慢等功能,在电力领域具有广泛应用。为了研究电力绝缘子层间气隙,构建了具有三层电力绝缘子的太赫兹(THz)波反射传播模型。模拟电力绝缘子层间气隙,制作了橡胶-环氧树脂板层间气隙缺陷样件。对含有层间气隙缺陷的样件的波形进行分析,能够检测厚度为100 μm的层间气隙缺陷,并对层间气隙厚度进行了计算。经数显千分测厚仪验证,THz检测层间气隙厚度的准确率达到95.61%。对缺陷样件进行能量积分成像并采用最大类间方差(Ostu)二值化方法提取气隙缺陷,为了验证THz检测的识别准确度,采用光学三坐标扫描仪对粘接缺陷重构提取缺陷面积,检测准确率达到95.29%。本文研究为电力绝缘子中含有层间气隙缺陷的检测提供了新方法。
仪器,测量与计量 电力绝缘子 层间气隙 反射传播模型 缺陷厚度检测 缺陷面积检测 
激光与光电子学进展
2023, 60(21): 2112002

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