Deep-ultraviolet (DUV) disinfection technology provides an expeditious and efficient way to suppress the transmission of coronavirus disease 2019 (COVID-19). However, the influences of viral variants (Delta and Omicron) and low temperatures on the DUV virucidal efficacy are still unknown. Here, we developed a reliable and uniform planar light source comprised of 275-nm light-emitting diodes (LEDs) to investigate the effects of these two unknown factors and delineated the principle behind different disinfection performances. We found the lethal effect of DUV at the same radiation dose was reduced by the cryogenic environment, and a negative-U large-relaxation model was used to explain the difference in view of the photoelectronic nature. The chances were higher in the cryogenic environment for the capture of excited electrons within active genetic molecules back to the initial photo-ionised positions. Additionally, the variant of Omicron required a significantly higher DUV dose to achieve the same virucidal efficacy, and this was thanks to the genetic and proteinic characteristics of the Omicron. The findings in this study are important for human society using DUV disinfection in cold conditions (e.g., the food cold chain logistics and the open air in winter), and the relevant DUV disinfection suggestion against COVID-19 is provided.

在自然界中，物体运动无处不在，随着智能汽车、6G移动通信的高速发展，对通信和运动探测传感融合的高集成度通感一体器件的需求日益增加。本文基于氮化镓多量子阱结构发光和探测并存的特点，提出了一种基于蓝宝石衬底外延生长氮化镓多量子阱材料的集成式光电子芯片，该芯片具有灵敏的运动探测功能及可见光通信功能。该光电子芯片发射器向运动的目标物体发射蓝光波段可见光信号，经目标物体运动调制的可见光信号反射回光电子芯片的接收器部分，激发变化的光电流。通过分析接收器的光电流变化，可探测以不同速度旋转的目标物体的运动情况，光电流曲线变化周期与目标物体旋转周期一致。本文还研究了光电子芯片的各项光电指标及可见光通信性能，该芯片可用作可见光通信系统的收发终端，可以处理和传输芯片采集到的运动探测信号。基于氮化镓多量子阱材料的光电子芯片是一种具有实用价值的高集成度通感一体终端器件。

三五族化合物半导体具有丰富的特性，使其在电子学、光电子学以及光子学领域获得了各种应用，这些都源自于三族元素和五族元素构成之二元系的各种魔幻组合形成的多变特性。本文基于二元系砷化物、磷化物及锑化物，对其构成的各种三元系、四元系和五元系的特征进行了几何图示阐述，主要涉及其带隙、晶格常数及其与不同衬底的晶格匹配区域。对氮化物和稀氮、铋化物和稀铋以及硼化物的一些特性也进行了简要讨论。通过对整个三五族化合物半导体的全面了解将有助于深入了解其潜力和可持续发展态势，包括存在的诸多挑战。

为去除水体中Cr(III)的污染, 本研究利用席夫碱反应原理制备了2-羟基-1-萘甲醛功能化SBA-15吸附剂(Q-SBA-15)。通过不同测试手段对所制备样品的形貌、孔道结构、元素组成和表面化学状态进行了系统表征。结果表明, SBA-15经2-羟基-1-萘甲醛修饰后, 其比表面积和孔径明显减小, 但表面形貌和晶体结构没有明显变化。为研究Q-SBA-15对Cr(III)的吸附性能, 详细分析了溶液pH和离子强度的影响, 以及吸附动力学、吸附等温线、吸附热力学和再生性能。结果表明, Q-SBA-15对Cr(III)吸附过程遵循准二级吸附动力学模型和Langmuir模型。当吸附温度为 40 ℃、pH为6、吸附时间为120 min时, Q-SBA-15对Cr(III)的吸附容量最大, 达到102.3 mg/g。Q-SBA-15对Cr(III)的吸附作用主要依靠其表面官能团与Cr(III)的配位螯合作用, 且为自发吸热过程。再生实验表明Q-SBA-15具有良好的重复使用性。该Q-SBA-15吸附剂在去除Cr(III)方面具有潜在的应用价值。

In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.