采用高真空射频磁控溅射法在硅Si（111）衬底上沉积氧化镓（β?Ga₂O₃），开展了溅射温度对Ga₂O₃微观结构及光学性能影响的研究，利用 X 射线衍射、扫描电子显微镜、荧光光谱仪等测试手段对Ga₂O₃晶体结构、表面形貌及光学性能进行表征分析。实验结果表明，在高纯Ar气环境下，所沉积的Ga₂O₃形貌差异与不同溅射温度下Ga₂O₃生长机理有关，当溅射温度达到300 ℃时，Ga₂O₃发生热分解，形成金属Ga团簇；当溅射温度达到400 ℃时，金属Ga团簇作为催化剂触发Ga₂O₃纳米线的自催化生长。光致发光（PL）光谱中，Ga₂O₃样品在300~700 nm波长范围内显示出4个位于紫光、蓝光、绿光区域的发射峰，在溅射温度为400 ℃下形成的Ga₂O₃纳米线发射峰显著增强，并且发生轻微的蓝移，纳米结构中较大的比表面积以及量子尺寸效应对Ga₂O₃的荧光发射（PL）性能具有重要影响。拉曼光谱（Raman）显示，随着溅射温度升高，Ga₂O₃晶体质量有所提高；在溅射温度为400 ℃下形成的纳米线出现新的拉曼振动模式，并且发生18 cm^-1的蓝移。

The plasma-enhanced chemical vapor deposition (PECVD) technique is well suited for fabricating optical filters with continuously variable refractive index profiles; however, it is not clear how the optical and structural properties of thin films differ when deposited on different substrates. Herein, silicon nitride films were deposited on silicon, fused silica, and glass substrates by PECVD, using silane and ammonia, to investigate the effects of the substrate used on the optical properties and structures of the films. All of the deposited films were amorphous. Further, the types and amounts of Si-centered tetrahedral Si–Si_vN_4-v bonds formed were based upon the substrates used; Si–N₄ bonds with higher elemental nitrogen content were formed on Si substrates, which lead to obtaining higher refractive indices, and the Si–SiN₃ bonds were mainly formed on glass and fused silica substrates. The refractive indices of the films formed on the different substrates had a maximum difference of 0.05 (at 550 nm), the refractive index of SiN_x films formed on silicon substrates was 1.83, and the refractive indices of films formed on glass were very close to those formed on fused silica. The deposition rates of these SiN_x films are similar, and the extinction coefficients of all the films were lower than 10^?4.