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聂君心 ^1,2朱来攀 ^1,2,*王中林 ^1,2,**

作者单位

摘要

¹ 中国科学院北京纳米能源与系统研究所，北京 101400

² 中国科学院大学纳米科学与工程学院，北京 100049

随着柔性可穿戴设备和自驱动传感技术的快速发展，摩擦电致发光（Triboelectrification induced electroluminescence，TIEL）材料因其独特的力-光转换特性受到广泛关注。其中，掺杂硫化锌（Zinc sulfide， ZnS）材料因其高发光效率、长寿命及可调控的发光特性，成为研究热点。本文综述了掺杂ZnS摩擦电致发光薄膜机理研究、性能优化及实际应用等方面的研究进展。首先，阐释了掺杂ZnS的发光机制，以及基于掺杂ZnS的摩擦电致发光薄膜结构及工作原理；其次，梳理了提高发光强度的相关策略，并详细探讨了国内外近年来基于该体系的各种应用研究进展；最后对掺杂ZnS摩擦电致发光薄膜的未来发展趋势与应用前景进行了展望。

掺杂硫化锌摩擦电致发光柔性可穿戴设备自驱动传感薄膜 doped zinc sulfide triboelectrification-induced electroluminescence flexible wearables self-driven sensors thin films

Fabrication of ultra-low-absorption thin films via ion beam-assisted electron-beam evaporation

发光学报

2025, 46(6): 961

Research Articles

Ruichen Song ^1,2Jiaqi Hu ²Yunqi Peng ²Ying’ao Xiao ²[ ... ]Zhilin Xia ^1,2,*

Author Affiliations

Abstract

¹ State Key Laboratory of Advanced Glass Materials, Wuhan University of Technology, Wuhan, China

² School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, China

High-power laser systems require thin films with extremely low absorption. Ultra-low-absorption films are often fabricated via ion beam sputtering, which is costly and slow. This study analyzes the impact of doping titanium and annealing on the absorption characteristics of thin films, focusing on composition and structure. The results indicate that the primary factor influencing absorption is composition. Suppressing the presence of electrons or holes that do not form stable chemical bonds can significantly reduce absorption; for amorphous thin films, the structural influence on absorption is relatively minor. Thus, composition control is crucial for fabricating ultra-low-absorption films, while the deposition method is secondary. Ion beam-assisted electron-beam evaporation, which is relatively seldom used for fabricating low-absorption films, was employed to produce high-reflectivity films. After annealing, the absorption at 1064 nm reached 1.70 parts per million. This method offers a cost-effective and rapid approach for fabricating ultra-low-absorption films.

annealing treatment electronic structure thin films Ti-doped Ta₂O₅

High Power Laser Science and Engineering

2025, 13(3): 03000e38

溶胶-凝胶法制备SnO2：Ti薄膜的光电性能研究

王玉新 ^*李燕鑫黄彩霞赵莉

作者单位

摘要

辽宁师范大学物理与电子技术学院，辽宁大连 116029

为了克服二氧化锡（stannic oxide，SnO2）薄膜材料电导率低、透过率有限的缺点，通过掺杂改性的方式得到光电性能更佳的SnO2薄膜。以无水乙醇作为溶剂,采用溶胶-凝胶（soliquid-gelatum，sol-gel）法制备出了Ti掺杂分别为0 at%、3 at%、5 at%、7 at%、9 at%的SnO2薄膜。并利用X射线衍射仪（X-ray diffractometer，XRD）、 X射线光电子能谱（X-ray photoelectron spectroscopy，XPS）、扫描电子显微镜（scanning electron microscope，SEM）、原子力显微镜（atomic force microscope，AFM）、紫外-可见（ultraviolet-visible，UV-Vis）分光光度计和霍尔效应测试仪对Ti掺杂的SnO2薄膜的结构、形貌和光电性能进行研究。结果表明，除Ti掺杂量为9 at%以外，其余样品透过率都达到90%以上，光学带隙值随着掺杂浓度的升高呈现先减小后增大的趋势。另外，Ti掺杂使SnO2薄膜的电阻率降低，当Ti掺杂量为3 at%时，其样品品质因数(figure of merit,FOM)最高可达到14.45×10-3 Ω-1。

SnO2薄膜 Ti 掺杂溶胶-凝胶(sol-gel)法光电性能 SnO2 thin films Ti doping soliquid-gelatum (sol-gel) method photoelectric properties

Li⁺/ Al³⁺复合电解质对WO₃薄膜电致变色性能的影响

光电子·激光

2025, 36(5): 555

薄膜

下载：556次

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郑浩彬 ¹唐岩 ¹周兴龙 ¹唐秀凤 ¹[ ... ]袁双双 ^1,*

作者单位

摘要

¹ 五邑大学应用物理与材料学院，广东江门 529020

² 五邑大学土木建筑学院，广东江门 529030

电解质层位于电致变色器件的中心，通过电解质离子在电极材料中的嵌入和脱出，调控电极的可逆氧化还原反应，从而实现器件颜色变化。传统Li⁺电解质的响应速度较慢，无法满足快速响应的需求。基于在Li⁺电解质中掺入Al³⁺可以显著提升电致变色性能，制备了5种不同离子数比例的Li⁺/Al³⁺复合电解质，研究其对WO₃薄膜电致变色性能的影响。结果表明，Li⁺/Al³⁺复合电解质与纯Al³⁺电解质的着色响应时间和记忆效应明显优于纯Li⁺电解质。当c（Li⁺）∶c（Al³⁺）=1∶3时，着色响应时间最短，为1.05 s；开路28 h后，550 nm波长处的透过率仅增加7.1%。同时，复合电解质条件下的WO₃薄膜在循环稳定性方面显著优于纯电解质，尤其当c（Li⁺）∶c（Al³⁺）=1∶3时，表现出优异的循环性能。在1000圈循环伏安（CV）测试后，电荷容量保持率高达90.38%。本工作系统探讨了Li⁺/Al³⁺离子比例对WO₃薄膜电致变色性能的影响，对WO₃基电致变色器件的优化和应用具有重要的指导意义。

薄膜复合电解质电致变色性能氧化钨循环稳定性

Enhanced reflection laser protection thin films compatible with visible light stealth

光学学报

2025, 45(3): 0331001

Physical Optics

Zexiang He ^1,2Zexiong Hu ^1,2Jian Yang ^1,2Weijie Chen ^1,2[ ... ]Yikun Bu ^1,2,*

Author Affiliations

Abstract

¹ School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China

² Fujian Key Laboratory of Ultrafast Laser Technology and Applications, Xiamen University, Xiamen 361005, China

For bicolor regulation in laser protection compatible with visible light stealth, a metal–dielectric–enhanced reflection asymmetric Fabry–Perot structure is proposed that has high reflectance at the laser wavelength and the color control of the visible spectrum. The six-layer reflection enhancement unit is composed of an Al metal mirror, SiO₂, Ta₂O₅, and an ultrathin Nb metal layer. The synergistic relationship between the background color and laser wavelength reflectance was analyzed and simulated. Six different colors from blue to red with high reflectance at 1064 nm laser wavelength up to 97.84% were prepared. The thin films can withstand 2535 W cm^-2 power density continuous irradiation for 60 s without being destroyed. Moreover, a symmetrical structure presents the spectrum consistency from both directions, which makes the potential to be applied to the laser protective coatings. The blue symmetrical microreflector sample was prepared and sprayed on the nonplanar models to demonstrate the actual application effect. This simple and efficient scheme provides an innovative technical approach in the field of surface laser protection.

laser protection visible light stealth thin films

Thin film field-effect transistor with ZnO:Li ferroelectric channel

Chinese Optics Letters

2025, 23(1): 012602

研究论文

Transparent field-effect transistor ZnO thin films ferroelectric semiconductor channel transparent electronics

Armen Poghosyan ^*Ruben Hovsepyan Hrachya Mnatsakanyan

Author Affiliations

Abstract

Institute for Physical Research, Ashtarak 0203, Armenia

An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF₂ film as a gate insulator. Measurements showed that ZnO:Li films are ferroelectrics with spontaneous polarization

P_{S} = 1

–5

μ

C/cm² and coercive field

E_{C} = 5

–10

kV/cm. The dependences of drain–source current on drain–source voltage at various gate–source voltages in two antiparallel

P_{S}

states were measured and the values of field-effect mobility and threshold voltage were determined for two

P_{S}

states are as follows: (a)

μ = 1.5

cm²/Vs,

U_{th} = 30

V; (b)

μ = 1.7

cm²/Vs,

U_{th} = 23

V. Thus,

P_{S}

switching leads to a change in FET channel parameters. Results can be used to create a bistable or, more precisely, digital FET.

Journal of Advanced Dielectrics

2025, 15(1): 2450009

薄膜

基于表面热透镜的单透镜测量光学薄膜吸收技术研究

AI超清视频导读

花艳 ^1,2李大伟 ^2,4,*韩玉晶 ^1,**刘晓凤 ^2,4赵元安 ^2,3,4

作者单位

摘要

¹ 济南大学物理科学与技术学院，山东济南 250022

² 中国科学院上海光学精密机械研究所薄膜光学实验室，上海 201800

³ 中国科学院大学材料与光电研究中心，北京 100049

⁴ 中国科学院强激光材料重点实验室，上海 201800

吸收损耗是光学薄膜元件的重要性能参数之一，高效、准确测量光学薄膜的吸收损耗对于研制高性能、低损耗的光学薄膜元件至关重要，其中表面热透镜法是最常用的吸收测量手段。采用表面热透镜技术的测量装置可以分为分光路与共光路两种，其中分光路装置测量精度高，但光路复杂且调节难度大，同时易受环境影响，共光路装置简单、易调节，但装置参数固定、测量精度相对较低。针对该问题提出了共光路装置的改进设计，通过泵浦光束与探测光束平行入射的方式并利用透镜聚焦实现了二者焦斑的重合。基于改进技术搭建了单透镜测量装置并对光学薄膜样品进行了测量，测量结果与分光路装置较为接近。单透镜设计在保证分光路装置优势的前提下简化了装置、节省了成本，减少了调试环节、降低了调试难度，并在一定程度上消除了环境对装置的影响，对于保证吸收测量准确度、制备低损耗高性能的光学薄膜元件具有重要意义。

光学薄膜吸收损耗表面热透镜光热形变

中国激光

2025, 52(1): 0103101

材料、结构及工艺

高温退火对低温硫化生长的ZnS薄膜性能的影响

王朋杰 ¹张仁刚 ¹张超 ¹张鹏 ²[ ... ]王宝义 ²

作者单位

摘要

¹ 武汉科技大学冶金工业过程系统科学湖北省重点实验室，武汉 430081

² 中国科学院高能物理研究所，北京 100049

首先，采用磁控溅射法在石英玻璃衬底上沉积Zn薄膜；然后，通过低温硫化工艺制备出ZnS薄膜；其次，在500~800 ℃高温和氩气气氛中对样品进行1 h退火处理；最后，使用XRD，SEM，EDS和紫外-可见分光光度计等仪器，研究了退火温度对所得ZnS薄膜性能的影响。研究结果表明，通过低温硫化工艺制备出的ZnS薄膜为六方结构，在高温退火后，其晶粒尺寸变大，在可见光范围透光率高达约80%，带隙为3.59~3.63 eV。随着退火温度的升高，ZnS薄膜的晶粒尺寸从20 nm增加至28 nm，S/Zn原子比降低，表面形貌也发生变化，其中，当退火温度为500 ℃时，所得ZnS薄膜的质量较好，而当退火温度大于等于600 ℃时，ZnS薄膜中会出现硫杂质相。

ZnS薄膜磁控溅射硫化光学性能 ZnS thin films magnetron sputtering sulfidation optical properties

Si（111）邻位面衬底上InSb薄膜的外延生长及其可见光电导特性

半导体光电

2024, 45(6): 904

材料、结构及工艺

杜绍增方晨旭刘婷李含冬

作者单位

摘要

电子科技大学材料与能源学院，成都 611731

锑化铟（InSb）因其在红外探测、高速电子学和量子计算等领域的卓越性能备受关注。文章探索了Si(111)邻位面衬底上InSb薄膜的异质外延生长，并研究了其光电导特性。尝试采用Bi缓冲层结合InSb两步法生长策略解决Si与InSb晶格失配和热膨胀系数差异大的问题，在平坦Si(111)衬底上获得了高质量InSb(111)单晶薄膜。然而，在具有高密度台阶结构特征的Si(111)斜切衬底表面上生长得到的Bi(001)缓冲层存在大量倒反畴缺陷，在该表面上进一步生长得到的InSb薄膜均为多晶结构。所制备的InSb/Bi/Si异质结构在模拟日光辐照条件下显示出负光电导效应，应与异质结构界面态对InSb层光生载流子的捕获效应有关。

InSb薄膜 Si衬底临位面外延 Bi缓冲层 InSb thin films silicon substrate vicinal surface epitaxy bismuth buffer layer

Optimizing deposition regimes to fabricate VO₂/TiO₂/c-Al₂O₃ thin films for active metasurfaces

半导体光电

2024, 45(5): 811

研究论文

M. E. Kutepov ^1,*V. E. Kaydashev ¹D. V. Stryukov ²A. S. Konstantinov ³[ ... ]E. M. Kaidashev ¹

Author Affiliations

Abstract

¹ I. I. Vorovich Mathematics,Mechanics and Computer Science Institute,Laboratory of Nanomaterials,Southern Federal University,200/1 Stachki Avenue,344090 Rostov-on-Don,Russia

² Federal Research Centre,The Southern Scientific Centre of the Russian Academy of Sciences,Chekhov Avenue,41,344006,Rostov-on-Don,Russia

³ Physics Faculty,Southern Federal University,5 Zorge Street,344090 Rostov-on-Don,Russia

⁴ Institute of Physics,Southern Federal University,194 Stachki Avenue,344090 Rostov-on-Don,Russia

⁵ Moscow Institute of Physics and Technology (MIPT),Institutskiy 9,141701 Dolgoprudny,Russia

Decreasing the scale of vanadium dioxide (VO₂) structures is one of the ways to enhance the switching speed of the material. We study the properties of VO₂ films of altered thicknesses in the range of 20–170

nm prepared on c-sapphire substrates with a TiO₂ sublayer by pulsed laser deposition (PLD) method. The synthesis regime to design a TiO₂ film was preliminarily optimized based on XRD data. XRD patterns reveal an epitaxial growth of the VO₂ films with distortion of the monoclinic cell to hexagonal symmetry. The positions of the lattice vibration modes in Raman spectra are similar to those in bulk VO₂ when the film thickness is greater than

\sim 30

nm. For VO₂ films thicker that

\sim 20

nm,a lattice strain results in the modes’ positions and intensity change. However,the electrically triggered transition in a

\sim 50

nm thick VO₂ film reveals forward and reverse switching times as short as 20

ns and 400

ns,correspondingly.

Pulsed laser deposition (PLD) VO₂ TiO₂ thin films sapphire