基于表面等离激元提出了一种含金属挡板的波导侧向耦合谐振腔系统。当入射光从波导的入射端进入到该结构时，谐振腔会形成较窄的离散带，金属挡板会产生较宽的连续态，较窄的离散态与较宽的连续态发生干涉时，形成两种不同模式的Fano共振谱线。采用时域有限差分法对该结构的传输特性进行了仿真计算，分别研究了结构的磁场分布、电场分布、透射特性和传感性能，根据磁场分布图和电场分布图可更好地解释Fano共振的形成机理。仿真数据分析结果表明，几何参数与介质折射率可以调节结构的传输性能。最后对结构的几何参数进行了优化处理，得到了在最优参数下，该结构产生的两个Fano共振的品质因数分别为4.502×10⁵和1.967×10⁵，对应的灵敏度分别为800 nm/RIU和1 400 nm/RIU，均达到了较高的数值，具有良好的传感性能。所设计的耦合结构可为提高微纳光学传感器的性能提供一种可行的途径。

This work demonstrates high-performance NiO/β-Ga₂O₃ vertical heterojunction diodes (HJDs) with double-layer junction termination extension (DL-JTE) consisting of two p-typed NiO layers with varied lengths. The bottom 60-nm p-NiO layer fully covers the β-Ga₂O₃ wafer, while the geometry of the upper 60-nm p-NiO layer is 10 μm larger than the square anode electrode. Compared with a single-layer JTE, the electric field concentration is inhibited by double-layer JTE structure effectively, resulting in the breakdown voltage being improved from 2020 to 2830 V. Moreover, double p-typed NiO layers allow more holes into the Ga₂O₃ drift layer to reduce drift resistance. The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm². The device with DL-JTE shows a power figure-of-merit (PFOM) of 5.98 GW/cm², which is 2.8 times larger than that of the conventional single-layer JTE structure. These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga₂O₃ HJDs.

中子探测中，由于存在非弹性散射和慢中子捕获等作用，形成了n/γ混合辐射场，增加了中子探测的复杂性。有机闪烁体因其闪烁效率高、衰减时间短、探测效率高被广泛应用于中子探测。脉冲形状甄别是根据有机闪烁体中粒子衰减时间不同引起的脉冲形状差异来甄别n/γ的关键技术。传统脉冲形状甄别方法包括时域和频域甄别方法；近年来，各种机器学习技术也相继应用于n/γ甄别，并取得较好效果。为了更好地使用有机闪烁体和n/γ甄别方法进行中子探测，我们从有机闪烁体的发光机理、脉冲形状甄别原理、有机闪烁体类型及n/γ甄别方法等方面进行了较为全面的分析和综述，并总结了有机闪烁体和n/γ甄别方法的各种性能评价指标。最后，对有机闪烁体和n/γ甄别方法的发展趋势提出了展望。

钛酸钡(BaTiO₃)具有优异的介电、铁电、压电和热释电等性能, 在微电子机械系统和集成电路领域具有广泛的应用。降低BaTiO₃薄膜的制备温度使其与现有的CMOS-Si工艺兼容, 已成为应用研究和技术开发中亟需解决的问题。本研究引入与BaTiO₃晶格常数相匹配的LaNiO₃作为缓冲层, 以调控其薄膜结晶取向, 在单晶Si(100)基底上450 ℃溅射制备了结构致密的柱状纳米晶BaTiO₃薄膜。研究表明：450 ℃溅射温度在保持连续柱状晶结构和(001)择优取向的前提下, 能获得相对较大的柱状晶粒(平均晶粒直径27 nm), 一定残余应变也有助于其获得了较好的铁电和介电性能。剩余极化强度和最大极化强度分别达到了7和43 μC·cm^-2。该薄膜具有良好的绝缘性, 在 0.8 MV·cm^-1电场下, 漏电流密度仅为10^-5 A·cm^-2。其相对介电常数ε_r展现了优异的频率稳定性：在1 kHz时ε_r为155, 当测试频率升至1 MHz, ε_r仅轻微降低至145。薄膜的介电损耗较小, 约为0.01~0.03 (1 kHz ~ 1 MHz)。通过电容-电压测试, 该薄膜材料展示出高达51%的介电调谐率, 品质因子亦达到17(@1 MHz)。本研究所获得的BaTiO₃薄膜在介电调谐器件中有着良好的应用前景。

A high performance optical sensor based on a double compound symmetric gratings (DCSGs) structure is designed. The reflection spectrum of the DCSG is investigated by utilizing a method that combines a theoretical model with the eigenmode information of the grating structure. The theoretical results, which are observed to agree well with those acquired by rigorous coupled-wave analysis, show that the linewidth of the reflection spectrum decreases upon the increasing distance between the grating strips. This research work will lay a foundation for studying high performance integrated optical sensors in miniature nanostructures.