In this work, a two-step metal organic chemical vapor deposition (MOCVD) method was applied for growing β-Ga₂O₃ film on c-plane sapphire. Optimized buffer layer growth temperature (T_B) was found at 700 °C and the β-Ga₂O₃ film with full width at half maximum (FWHM) of 0.66° was achieved. A metal?semiconductor?metal (MSM) solar-blind photodetector (PD) was fabricated based on the β-Ga₂O₃ film. Ultrahigh responsivity of 1422 A/W @ 254 nm and photo-to-dark current ratio (PDCR) of 10⁶ at 10 V bias were obtained. The detectivity of 2.5 × 10¹⁵ Jones proved that the photodetector has outstanding performance in detecting weak signals. Moreover, the photodetector exhibited superior wavelength selectivity with rejection ratio (R_{250 nm}/R_{400 nm}) of 10⁵. These results indicate that the two-step method is a promising approach for preparation of high-quality β-Ga₂O₃ films for high-performance solar-blind photodetectors.

采用金属有机化学气相沉积（MOCVD）工艺在p-GaAs（100）衬底上外延了Ga₂O₃薄膜并制备了n-Ga₂O₃/p-GaAs异质结日盲紫外探测器。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对Ga₂O₃薄膜表面形貌、晶体质量进行了测试与分析。结果表明，Ga₂O₃薄膜呈单一晶向，薄膜表面平整且为Volmer-Weber模式外延。测试表明，n-Ga₂O₃/p-GaAs异质结探测器具有明显的整流特性。器件在5 V反向偏压和紫外光（254 nm）照射下实现了超过3.0×10⁴的光暗电流比、7.0 A/W的响应度、3412%的外量子效率、4.6×10¹³ Jones的探测率。我们利用TCAD软件对器件结构进行仿真，得到了器件内的电场分布和能带结构，并分析了器件的工作原理。该异质结探测器性能较好，制造工艺简单，为Ga₂O₃超灵敏日盲紫外探测器的研制提供了新途径。

日盲紫外光学探测器可以精准的接收到电晕放电产生的紫外辐射。利用Zemax软件设计了一款定焦日盲紫外光学系统，该系统由五片球面透镜构成，工作波段240 ~280 nm，匹配靶面直径18 mm的紫外像增强器，F数为2.5，焦距为50 mm，视场角为20.4°，光学总长为72 mm。调制传递函数在空间频率20 lp/mm处全视场均大于0.8，最大畸变小于0.5％。分析了系统在−20 ~60 ℃的离焦现象，计算了各温度下的热离焦量，采用被动式机械补偿的方法校正了由温度变化产生的热差。最后，通过蒙特卡洛分析模拟，对系统给出了合理的公差分配，分析结果表示系统加工装配后仍具有较好的成像质量。

日盲紫外探测器在**和民用领域均具有广阔的应用前景。基于宽禁带半导体材料的日盲紫外探测器具有无需昂贵的滤光片、工作电压低、全固态、体积小、重量轻、抗干扰能力强、工作温度范围广等特点，是公认的新一代紫外探测器。在众多的宽禁带半导体材料中，以Ga₂O₃作为典型代表的镓基氧化物材料因其优异的电学和光电特性已经成为近年来微电子学和光电子学领域的研究热点，特别是其本征日盲、耐高温、耐高压、化学稳定性好等优异特点使得该类材料在日盲紫外光电探测领域展现出巨大的发展潜力。鉴于此，本文综述了不同晶体结构的Ga₂O₃、镓酸盐氧化物、镓锡氧化物、镓铝氧化物等镓基氧化物薄膜及其日盲紫外探测器研究进展。

Ultrawide band gap semiconductors are promising solar-blind ultraviolet (UV) photodetector materials due to their suitable bandgap, strong absorption and high sensitivity. Here, β-Ga₂O₃ microwires with high crystal quality and large size were grown by the chemical vapor deposition (CVD) method. The microwires reach up to 1 cm in length and were single crystalline with low defect density. Owing to its high crystal quality, a metal–semiconductor–metal photodetector fabricated from a Ga₂O₃ microwire showed a responsivity of 1.2 A/W at 240 nm with an ultrahigh UV/visible rejection ratio (R_peak/R_{400 nm}) of 5.8 × 10⁵, indicating that the device has excellent spectral selectivity. In addition, no obvious persistent photoconductivity was observed in the test. The rise and decay time constants of the device were 0.13 and 0.14 s, respectively. This work not only provides a growth method for high-quality Ga₂O₃ microwires, but also demonstrates the excellent performance of Ga₂O₃ microwires in solar-blind ultraviolet detection.

Sn doping is an effective way to improve the response rate of Ga₂O₃ film based solar-blind detectors. In this paper, Sn-doped Ga₂O₃ films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga₂O₃ films changed from amorphous to β-Ga₂O₃ after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm. The β-Ga₂O₃ had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm. The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga₂O₃ thin film annealed in N₂ has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA, the photo dark current ratio is 1.7 × 10⁶, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10³%, the specific detection rate is 2.61 × 10¹² Jones, the response time and recovery time are 378 and 90 ms, respectively.