红外与毫米波学报, 2017, 36 (2): 135, 网络出版: 2017-06-06
GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面
Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates
摘要
系统地研究了随着GaSb薄膜生长温度的降低, Sb/Ga(V/III)比的变化对薄膜低缺陷表面质量的影响.为了获得良好表面形貌的GaSb外延层, 生长温度与V/III比均需要同时降低.当Sb源裂解温度为900℃时, 生长得到低缺陷表面的低温GaSb薄膜的最佳生长条件是生长温度为在再构温度的基础上加60℃且V/III比为7.1.
Abstract
The influence on the low-defect surface of GaSb thin-film material by the ratio of Sb to Ga (V/III) along with the reducing of the growth temperature was investigated systematically. In order to obtain a good surface morphology of the GaSb epitaxial layer with low defect, both of the growth temperature and the V/III ratio should be reduced at the same time. The optimal growth conditions of Low-temperature GaSb thin films are that the growth temperature is Tc+60℃ and the V/III ratio is about 7.1 when Sb cracker temperature is 900℃.
郝瑞亭, 任洋, 刘思佳, 郭杰, 王国伟, 徐应强, 牛智川. GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面[J]. 红外与毫米波学报, 2017, 36(2): 135. HAO Rui-Ting, REN Yang, LIU Si-Jia, GUO Jie, WANG Guo-Wei, XU Ying-Qiang, NIU Zhi-Chuan. Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 135.