InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响
[1] CRAWFORD M H. LEDs for solid-state lighting:performance challenges and recent advances [J]. IEEE J. Sel. Top. Quantum Electron., 2009, 15(4):1028-1040.
[2] NAKAMURA S,SENOH M,IWASA N,et al.. High-brightness InGaN blue,green and yellow light-emitting diodes with quantum well structures [J]. Jpn. J. Appl. Phys., 1995,34(7A):L797-L799.
[3] KIM M H,SCHUBERT M F,DAI Q,et al.. Origin of efficiency droop in GaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2007,91(18):183507-1-3.
[4] VAMPOLA K J,IZA M,KELLER S,et al.. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures [J]. Appl. Phys. Lett., 2009,94(6):061116-1-3.
[5] SHEN Y C,MUELLRE G O,WATANABE S,et al.. Auger recombination in InGaN measured by photoluminescence [J]. Appl. Phys. Lett., 2007,91(14):141101-1-3.
[6] YANG Y,CAO X A,YAN C H. Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes [J]. IEEE Trans. Electron Dev., 2008,55(7):1771-1775.
[7] NI X F,QIAN F,SHIMADA R,et al.. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells [J]. Appl. Phys. Lett., 2008,93(17):171113-1-3.
[8] WANG C H,KE C C,LEE C Y,et al.. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer [J]. Appl. Phys. Lett., 2010,97(26):261103-1-3.
[9] ZHANG Z H,JU Z G,LIU W,et al.. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering [J]. Opt. Lett., 2014,39(8):2483-2486.
[10] SU C Y,TU C G,LIU W H,et al.. Enhancing the hole-injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron-blocking layer [J]. IEEE Trans. Electron Dev., 2017,64(8):3226-3233.
[11] HANGLEITER A,HITZEL F,NETZEL C,et al.. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency [J]. Phys. Rev. Lett., 2005,95(12):127402-1-4.
[12] QUAN Z J,WANG L,ZHENG C D,et al.. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes [J]. J. Appl. Phys., 2014,116(18):183107-1-5.
[13] WU X M,LIU J L,QUAN Z J,et al.. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes [J]. Appl. Phys. Lett., 2014,104(22):221101-1-5.
[14] YOO Y S,NA J H,SON S J,et al.. Effective suppression of efficiency droop in GaN-based light-emitting diodes:role of significant reduction of carrier density and built-in field [J]. Sci. Rep., 2016,6:34586-1-9.
[15] LV Q J,LIU J L,MO C L,et al.. Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure:role of enhanced interwell carrier transport [J]. ACS Photon., 2019,6(1):130-138.
[16] SHEN Y C,WIERER J J,KRAMES M R,et al.. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes [J]. Appl. Phys. Lett., 2003,82(14):2221-2223.
[17] NETZEL C,BREMERS H,HOFFMANN L,et al.. Emission and recombination characteristics of Ga1-xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits [J]. Phys. Rev. B, 2007,76(15):155322.
[18] LI Y F,YUN F,SU X L,et al.. Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes [J]. J. Appl. Phys., 2014,116(12):123101-1-6.
[19] KIM K S,HAN D P,KIM H S,et al.. Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes [J]. Appl. Phys. Lett., 2014,104(9):091110.
[20] GTZ W,JOHNSON N M,WALKER J,et al.. Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 1996,68(5):667-669.
[21] SCHUBERT E F. Light-emitting Diodes [M]. 2nd ed. New York:Cambridge University Press, 2006.
[22] QI W J,ZHANG J L,MO C L,et al.. Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates [J]. J. Appl. Phys., 2017,122(8):084504.
[23] TAO X X,LIU J L,ZHANG J L,et al.. Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer [J]. Opt. Mater. Express, 2018,8(5):1221-1230.
[24] NIUN H,WANG H B,LIU J P,et al.. Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction [J]. Solid-State Electron., 2007,51(6):860-864.
余浩, 郑畅达, 丁杰, 莫春兰, 潘拴, 刘军林, 江风益. InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响[J]. 发光学报, 2019, 40(9): 1108. YU Hao, ZHENG Chang-da, DING Jie, MO Chun-lan, PAN Shuan, LIU Jun-lin, JIANG Feng-yi. High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer[J]. Chinese Journal of Luminescence, 2019, 40(9): 1108.