CMOS荧光波长检测芯片的设计与仿真

施朝霞; 吴柯柯; 李如春; 曹全君

doi:doi:10.16818/j.issn1001-5868.2017.06.003

半导体光电, 2017, 38 (6): 784, 网络出版: 2017-12-25

CMOS荧光波长检测芯片的设计与仿真

Design and Simulation of CMOS Fluorescence Chip for Wavelength Detection

论文大纲

施朝霞 ^*吴柯柯李如春曹全君

作者单位

浙江工业大学信息学院, 杭州 310023

双结深光电二极管波长检测芯片仿真 double junction photodiode wavelength detection chip CMOS CMOS simulation

摘要

双结深光电二极管包括一深一浅两个光电二极管, 深、浅pn结光电二极管的光电流比值I2/I1随入射光波长单调增加。文章基于0.5 μm CMOS工艺对双结深光电二极管深、浅结光电流进行了数学建模和Matlab仿真。设计了片上信号处理电路, 将双结深光电二极管深、浅结光电流比值转换成电压输出。仿真结果表明, 信号处理电路的输出与ln(I2/I1)具有良好的线性关系。单片集成的CMOS波长检测芯片可用于未知荧光的波长检测和特异性分析。

Abstract

Double junction photodiode includes one deep and one shallow pn junctions, and the optimal current ratio I2/I1 between deep and shallow junctions increases with the raise of the incident wavelength. In this paper, the mathematical modeling and Matlab simulation of the photocurrent for deep and shallow junction diodes are realized based on 0.5 μm CMOS technology. The current ratio of deep and shallow junction for double junction photodiode is converted to the voltage by the integrated signal processing circuits. The simulation results show that the output of the signal processing circuits has a good linear relationship with the natural logarithm of ln(I2/I1). The monolithic integrated CMOS wavelength detection chip can be used for the detection and analysis of unknown wavelength.

参考文献

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施朝霞, 吴柯柯, 李如春, 曹全君. CMOS荧光波长检测芯片的设计与仿真[J]. 半导体光电, 2017, 38(6): 784. SHI Zhaoxia, WU Keke, LI Ruchun, CAO Quanjun. Design and Simulation of CMOS Fluorescence Chip for Wavelength Detection[J]. Semiconductor Optoelectronics, 2017, 38(6): 784.

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