光学学报, 2019, 39 (3): 0316001, 网络出版: 2019-05-10
W/VO2方形纳米柱阵列可调中红外宽频吸收器 下载: 1252次
Tunable Mid-Infrared Broadband Absorber Based on W/VO2 Square Nano-Pillar Array
图 & 表
图 1. 吸收器结构示意图。(a)周期单元三维立体图;(b)周期单元俯视图
Fig. 1. Structural diagrams of absorber. (a) Three-dimensional view of unit cell; (b) top view of unit cell
图 2. 吸收器结构参数对其吸收性能的影响。(a)介质层VO2厚度h2;(b)纳米柱边长d3;(c)纳米柱边长d1;(d)纳米柱边长d2;(e)顶层W膜厚度h1;(f)周期T;(g)边长为d1的纳米柱到单元中心线的距离L1;(h)边长为d2的纳米柱到单元中心线的距离L2
Fig. 2. Effects of structural parameters of absorber on absorption characteristics. (a) Dielectric layer VO2 thickness h2; (b) nano-pillar side length d3; (c) nano-pillar side length d1; (d) nano-pillar side length d2; (e) top W film thickness h1; (f) period T; (g) distance L1 between nano-pillar with side length d1 and center line of unit; (h) distance L2 between nano-pillar with side length d2 and center line of unit
图 4. 吸收器在VO2介质层中心(Z=0.25 μm)处X-Y截面的磁场分布。 (a) 20 ℃, λ=3 μm; (b) 20 ℃, λ=4 μm; (c) 20 ℃, λ=5 μm; (d) 80 ℃, λ=3 μm; (e) 80 ℃, λ=4 μm; (f) 80 ℃, λ=5 μm
Fig. 4. Magnetic field distributions of the X-Y section of the absorber at the center of VO2 dielectric layer (Z=0.25 μm). (a) 20 ℃, λ=3 μm; (b) 20 ℃, λ=4 μm; (c) 20 ℃, λ=5 μm; (d) 80 ℃, λ=3 μm; (e) 80 ℃, λ=4 μm; (f) 80 ℃, λ=5 μm
黄雅琴, 李毅, 李政鹏, 裴江恒, 田蓉, 刘进, 周建忠, 方宝英, 王晓华, 肖寒. W/VO2方形纳米柱阵列可调中红外宽频吸收器[J]. 光学学报, 2019, 39(3): 0316001. Yaqin Huang, Yi Li, Zhengpeng Li, Jiangheng Pei, Rong Tian, Jin Liu, Jianzhong Zhou, Baoying Fang, Xiaohua Wang, Han Xiao. Tunable Mid-Infrared Broadband Absorber Based on W/VO2 Square Nano-Pillar Array[J]. Acta Optica Sinica, 2019, 39(3): 0316001.