GaN外延膜的红外椭偏光谱研究
王静, 李向阳, 刘骥, 黄志明. GaN外延膜的红外椭偏光谱研究[J]. 红外与激光工程, 2005, 34(5): 544.
王静, 李向阳, 刘骥, 黄志明. GaN epilayer by infrared spectroscopic ellipsometry[J]. Infrared and Laser Engineering, 2005, 34(5): 544.
[1] . InGaN multi-quantumwell structure laser diodes grown on MgAl2O4 substrates[J]. Appl Phys Lett, 1996, 68: 2105-2107.
[2] . Ⅲ -Ⅴ Nitrides-Important future electronic materials[J]. Journal of Materials Science:Materials in Electronics, 1999, 10: 227-254.
[3] . Investigation of longitudinaloptical phonon-plasmon coupled modes in highly conducting bulk GaN[J]. Appl Phys Lett, 1995, 67: 2524-2526.
[4] . Infrared lattice vibrations and free-electron dispersion in GaN[J]. Phy Rev B, 1973, 7: 743-750.
[5] . Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy[J]. J Appl Phy, 1999, 86: 2691-2695.
[6] . Raman scattering from LO phonon-plasmon coupled modes in gallium nitride[J]. J Appl Phys, 1994, 75: 1098-1101.
[7] . Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation[J]. J Appl Phys, 1998, 83: 3323-3336.
[8] Azzam R M A,Bashara N M.Ellipsometry and Polarized Light[M].North -Holland: Amsterdan, 1997.283- 288.
[9] . Infrared dielectric anisotropy and phonon modes of sapphire[J]. Phys Rev B, 1999, 61: 8187-8201.
[10] . Optical properties of hexagonal GaN[J]. J Appl Phys, 1997, 82(7): 3528-3535.
[11] . Optical anisotropy of wurtzite GaN on sapphire characterized by spectroscopic ellipsometry[J]. Semicond Sci Technol, 2004, 19: 417-420.
[12] Jenkins F A,White H E.Fundamentals of Optics[M].New York:Mc Graw-Hill, 1976.487-488.
王静, 李向阳, 刘骥, 黄志明. GaN外延膜的红外椭偏光谱研究[J]. 红外与激光工程, 2005, 34(5): 544. 王静, 李向阳, 刘骥, 黄志明. GaN epilayer by infrared spectroscopic ellipsometry[J]. Infrared and Laser Engineering, 2005, 34(5): 544.
PDF全文
